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CEP80N75-VB Product details

Product introduction:

1. CEP80N75-VB Product Introduction



CEP80N75-VB is a high-current, high-voltage single N-type MOSFET in TO220 package, specially designed for applications requiring high current and high voltage. It has a drain-source voltage (VDS) of 80V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. At a gate-source voltage of 10V, its on-resistance (RDS(ON)) is 7 milliohms, and at 4.5V it is 9 milliohms. The maximum continuous drain current (ID) of this MOSFET is 100A. It uses Trench process technology to provide excellent low on-resistance and high current handling capabilities, and is widely used in high-power switching and power management fields.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 80V 3V 100A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. CEP80N75-VB Detailed parameter description



1. **Basic parameters**:

- **Model**: CEP80N75-VB

- **Package**: TO220

- **Configuration**: Single-N-Channel



2. **Electrical parameters**:

- **Drain-source voltage (VDS)**: 80V

- **Gate-source voltage (VGS)**: ±20V

- **Threshold voltage (Vth)**: 3V



3. **On-state characteristics**:

- **On-resistance (RDS(ON))**:

- 9mΩ @ VGS=4.5V

- 7mΩ @ VGS=10V

- **Maximum continuous drain current (ID)**: 100A



4. **Technology**:

- **Technology**: Trench



Domain and module applications:

3. Application fields and module examples



The high current and high voltage capabilities of CEP80N75-VB make it suitable for multiple fields and modules, including:



1. **Power switch**:

- **Application**: Power switch, DC-DC converter

- **Description**: In power switch and DC-DC converter, the high current capability and low on-resistance of CEP80N75-VB can efficiently handle large currents, while working stably in high voltage environments, improving power conversion efficiency and reliability.



2. **Power amplifier**:

- **Application**: Power amplifier, motor control

- **Description**: This MOSFET can handle high current loads in power amplifiers and motor control modules, ensuring high efficiency and low power consumption operation, and is suitable for applications that require high current drive.



3. **Industrial Power Systems**:

- **Application**: Industrial power systems, high-power devices

- **Description**: In industrial power systems and high-power devices, CEP80N75-VB provides stable current handling capabilities, can withstand high voltages and large currents, and is suitable for demanding power control and distribution systems.



4. **Automotive Electronics**:

- **Application**: Automotive power management, startup circuits

- **Description**: CEP80N75-VB is able to handle high current loads in automotive electronic systems, especially in power management and startup circuits, providing reliable performance and efficient current handling capabilities.



The design of CEP80N75-VB optimizes high current and high voltage handling capabilities, and is suitable for multiple fields such as power switches, power amplifiers, industrial power systems, and automotive electronics, ensuring efficient and reliable operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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