Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
120A |
|
|
5mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **VDS (drain-source voltage): ** 60V
The maximum drain-source voltage is 60V, which is suitable for medium and high voltage applications and can work stably under relatively high voltage conditions.
- **VGS (gate-source voltage): ** ±20V
The maximum gate-source voltage of the MOSFET is ±20V, ensuring stability and reliability under high voltage operation.
- **Vth (threshold voltage): ** 3V
The MOSFET starts to turn on when the gate-source voltage reaches 3V, which is suitable for application scenarios that require a lower turn-on voltage.
- **RDS(ON) (drain-source on-resistance): **
- 5mΩ @ VGS=10V
The low on-resistance ensures high efficiency and low power consumption of the MOSFET under high current conditions, reducing power loss and heat generation.
- **ID (Continuous Leakage Current):** 120A
Capable of handling up to 120A continuous current, suitable for applications requiring high current, ensuring system stability and efficiency.
Domain and module applications：
Application Examples
The high current handling capability and low on-resistance of CEP6056-VB MOSFET make it excellent in many high-power applications. The following are some typical application areas:
1. **Power Management:**
- In power management systems, CEP6056-VB can handle high currents and has extremely low on-resistance. It is suitable for DC-DC converters and switching power supplies to ensure high efficiency and stable output of power supplies and optimize the power conversion process.
2. **Electric Vehicles:**
- In the motor drive and power conversion system of electric vehicles, this MOSFET can handle high currents and provide efficient switching control. It is suitable for motor controllers and charging management systems to improve the performance and endurance of electric vehicles.
3. **Power Amplifiers:**
- In power amplifiers, CEP6056-VB's high current handling capability and low RDS(ON) make it suitable for high-power amplifier circuits, which can efficiently switch and amplify power, enhancing the output capacity and efficiency of the system.
4. **High-efficiency power module: **
- In high-efficiency power modules, the low on-resistance and high current capability of CEP6056-VB provide efficient power switching and management functions, which are suitable for high-power computing devices and high-performance electronic products, ensuring efficient utilization and stability of power.
5. **Battery management system: **
- In battery management systems, CEP6056-VB can be used for battery charge and discharge control, capable of handling high currents, ensuring efficient charging and discharging of batteries, suitable for electric vehicles and high-capacity battery management systems, improving system reliability and performance.
With its excellent current handling capability and low on-resistance, CEP6056-VB MOSFET is an ideal choice for high-voltage and high-power applications, providing a stable and efficient solution for a variety of high-performance power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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