Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
80A |
|
|
6mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **VDS (drain-source voltage): ** 30V
The maximum drain-source voltage that the MOSFET can withstand, suitable for medium voltage applications.
- **VGS (gate-source voltage): ** ±20V
This is the maximum allowable voltage between the gate and source of the MOSFET, ensuring its stability and safety under high voltage operation.
- **Vth (threshold voltage): ** 1.7V
This is the voltage at which the MOSFET starts to turn on when the gate-source voltage reaches this value, suitable for low voltage switching applications.
- **RDS(ON) (drain-source on-resistance): **
- 9mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
The low on-resistance ensures high efficiency and low power consumption of the MOSFET at high currents.
- **ID (continuous drain current): ** 80A
This is the maximum continuous current that the MOSFET can carry, suitable for high current applications to ensure system stability and reliability.
Domain and module applications：
Application Examples
CEP21A3-VB MOSFET has high current handling capability and low on-resistance, making it suitable for a variety of high current, high-efficiency application scenarios. The following are some typical application areas:
1. **Power switch:**
- In power switch applications, the low on-resistance and high current capability of CEP21A3-VB make it very suitable for high-power power switches such as DC-DC converters and switching power supplies, ensuring efficient power management and stable power output.
2. **Motor drive:**
- In motor drive applications, this MOSFET can handle high currents and is suitable for motor control modules, providing efficient current switching and driving capabilities to ensure smooth operation and high efficiency of the motor.
3. **Power amplifier:**
- In power amplifier circuits, CEP21A3-VB as a switching element can handle high currents and is suitable for high-power amplifiers, providing efficient power conversion and amplification, and improving system performance.
4. **High-efficiency power management: **
- The low RDS(ON) and high current capability of this MOSFET ensure high efficiency and stability of the power management system, which is suitable for high-performance computing devices and high-power power modules to optimize power efficiency.
5. **Battery management system: **
- In the battery management system, CEP21A3-VB can handle high current and is suitable for battery charge and discharge control to ensure efficient charging and discharging of the battery, which is suitable for electric vehicles and high-capacity battery management systems.
With its low on-resistance and high current capability, CEP21A3-VB MOSFET provides reliable support for a variety of high-power and high-efficiency applications, ensuring high efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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