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CEP09N7A-VB Product details

Product introduction:

1. CEP09N7A-VB MOSFET Product Introduction



CEP09N7A-VB is a high-voltage N-channel MOSFET in TO220 package. This MOSFET adopts SJ_Multi-EPI technology and has excellent voltage handling capability and stability. Its maximum drain-source voltage (VDS) is 700V, making it very suitable for high-voltage power supplies and load control applications. The gate threshold voltage (Vth) of CEP09N7A-VB is 3.5V, the on-resistance (RDS(ON)) is 1100mΩ at VGS=10V, and the maximum drain current (ID) is 5A. The technical characteristics of this MOSFET enable it to excel in application scenarios requiring high voltage and medium current.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 700V 3.5V 5A 1100mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 700V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 700V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. Detailed parameter description of CEP09N7A-VB MOSFET



- **Model**: CEP09N7A-VB

- **Package**: TO220

- **Configuration**: Single N-channel

- **Maximum drain-source voltage (VDS)**: 700V

- **Maximum gate-source voltage (VGS)**: ±30V

- **Gate threshold voltage (Vth)**: 3.5V

- **On-resistance (RDS(ON))**:

- 1100mΩ @ VGS = 10V

- **Maximum drain current (ID)**: 5A

- **Technology**: SJ_Multi-EPI

- **Operating temperature range**: -55°C to +150°C

- **Thermal resistance (junction to ambient)**: 62.5°C/W

- **BVDSS**: 700V

- **Qgd**: 45nC

- **Switching speed**: Medium



Domain and module applications:

III. Application fields and module examples of CEP09N7A-VB MOSFET



1. **High-voltage power switch**: CEP09N7A-VB performs well in high-voltage power switch applications. Its high withstand voltage characteristics make it suitable for power switches and power management modules with voltages of 700V and above, and can provide stable power control and protection.



2. **Inverter**: In inverter systems, CEP09N7A-VB can be used as a switching element to provide efficient current switching and voltage conversion. Its high withstand voltage characteristics make it suitable for use in solar inverters and industrial inverter systems.



3. **High-voltage motor drive**: Due to its high breakdown voltage and medium current handling capability, CEP09N7A-VB is suitable for high-voltage motor drive applications. It can work stably in high-voltage environments and is suitable for use in motor control and high-voltage power tools.



4. **Battery Management System**: CEP09N7A-VB provides reliable current switching and load control in high-voltage battery management systems, suitable for electric vehicles and energy storage systems, ensuring the safety and stability of battery systems.



5. **Power Electronics Devices**: In power electronic devices such as high-voltage inverters and power conditioners, CEP09N7A-VB can provide efficient switching performance and high-voltage handling capabilities, suitable for industrial power regulation and control modules.



CEP09N7A-VB MOSFET, with its high withstand voltage and stable current handling capabilities, excels in high-voltage power switches, inverters, high-voltage motor drives, battery management systems, and power electronic devices, providing excellent performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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