Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
|
19mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **VDS (drain-source voltage): ** 20V
This is the maximum voltage that the MOSFET can withstand between the drain and the source, and is suitable for medium voltage applications.
- **VGS (gate-source voltage): ** ±12V
Indicates the maximum allowable voltage from the gate to the source, ensuring that the MOSFET will not be damaged during operation.
- **Vth (threshold voltage): ** 0.5~1.5V
This is the gate-source voltage at which the MOSFET starts to turn on. A lower threshold voltage helps the MOSFET start at a lower gate voltage and improve switching efficiency.
- **RDS(ON) (drain-source on-resistance): **
- 26mΩ @ VGS=4.5V
- 19mΩ @ VGS=10V
These values represent the on-resistance at different gate-source voltages. A lower RDS(ON) value can reduce power consumption and improve switching efficiency.
- **ID (Continuous Drain Current): ** 7.1A
Indicates the maximum continuous current that the MOSFET can handle, ensuring stability under high load current conditions.
Domain and module applications：
Application Examples
The dual N-channel configuration of CEM9935-VB MOSFET makes it widely used in many fields and modules. The following are some typical usage scenarios:
1. **Motor drive:**
- In motor drive applications, the dual N-channel configuration of CEM9935-VB enables efficient control of the motor. Its low on-resistance and high current carrying capacity ensure the efficient operation and stability of the motor drive system, which is suitable for power tools, electric fans and other motor drive devices.
2. **DC-DC converter:**
- In DC-DC converters, this MOSFET provides efficient voltage conversion as a switching element. Its low RDS(ON) value and high current handling capability improve the efficiency of the converter, which is suitable for computer power supplies, power modules and other high power conversion applications.
3. **Power management system:**
- CEM9935-VB is used as a switching element in power management systems to achieve efficient power management. Its high current carrying capability and low on-resistance make it an ideal choice for power management and power distribution systems.
4. **LED Driver:**
- In LED driver applications, this MOSFET can effectively control the switching of LEDs. Its low on-resistance improves the efficiency of LED drivers and is suitable for lighting systems and display screen control to provide stable light source output.
5. **Switching Power Supply:**
- CEM9935-VB can be used for switching power supply applications, and its dual N-channel design provides flexible switching control. It is suitable for high-efficiency power switching and power conversion, reducing power consumption and improving system efficiency.
The CEM9935-VB MOSFET provides strong support for various power management and switching applications with its dual N-channel configuration, high current handling capability and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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