Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-20V |
|
-0.6V |
-13A |
21mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-20V |
|
-0.6V |
-13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-20V |
|
-0.6V |
-13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **VDS (drain-source voltage): ** -20V
This is the maximum negative voltage that the MOSFET can withstand between the drain and the source, and is suitable for medium and low voltage load switching applications.
- **VGS (gate-source voltage): ** ±20V
Indicates the maximum allowable voltage from the gate to the source, ensuring that the MOSFET will not be damaged during operation.
- **Vth (threshold voltage): ** -0.6V
This is the gate-source voltage at which the MOSFET starts to turn on. A lower threshold voltage helps the MOSFET start at a lower gate voltage and improve switching efficiency.
- **RDS(ON) (drain-source on-resistance): **
- 21mΩ @ VGS=2.5V
- 15mΩ @ VGS=4.5V
These values represent the on-resistance at different gate-source voltages. A lower RDS(ON) value helps reduce power consumption and improve switching efficiency.
- **ID (Continuous Drain Current):** -13A
Indicates the maximum continuous current that the MOSFET can handle, ensuring stability under high load current conditions.
Domain and module applications：
Application Examples
The P-channel configuration of CEM9424-VB MOSFET makes it widely used in many fields and modules. The following are some typical usage scenarios:
1. **Load switch:**
- In load switch applications, CEM9424-VB can be used as a load switch element. Its low on-resistance and high current carrying capacity ensure efficient and reliable switching operation. It is suitable for battery switches, power management modules and other load control scenarios.
2. **Power management:**
- In power management applications, this MOSFET can efficiently control the on and off of power. Its low RDS(ON) value helps reduce power consumption and improve system efficiency, and is suitable for various power management systems and power converters.
3. **Reverse current protection:**
- CEM9424-VB is suitable for use as a reverse current protection switch. Its negative voltage and low on-resistance characteristics ensure the safety and stability of the circuit. It is suitable for battery protection and current reverse protection modules.
4. **Battery-powered systems:**
- In battery-powered systems, CEM9424-VB can effectively control battery switching and load management. Its high current handling capability and low on-resistance make it an ideal choice for battery switching and management systems.
5. **Power management systems:**
- In power management systems, CEM9424-VB can be used as a switching element to provide efficient switching control. Its high current carrying capacity and low on-resistance improve the overall performance of the power management system and is suitable for power distribution and switching modules.
With its high current carrying capacity, low on-resistance and P-channel design, CEM9424-VB MOSFET provides reliable support for various power management and load switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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