CEH2313-VB Product details
Product introduction:
**CEH2313-VB** is a high-performance P-channel MOSFET in a SOT23-6 package and manufactured using Trench technology. The MOSFET has a maximum drain-source voltage (VDS) of -30V and supports a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is -1.7V, the on-resistance (RDS(ON)) is 49mΩ at a VGS of 10V, and the maximum drain current (ID) is -4.8A. The device is particularly suitable for load switching and control applications that require high performance and high reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
- **Model**: CEH2313-VB
- **Package**: SOT23-6
- **Configuration**: Single channel P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench
Domain and module applications:
**CEH2313-VB** MOSFET is widely used in the following fields and modules:
1. **Power Management**:
- In power management systems, this MOSFET can be used as an efficient load switch, especially in small power modules such as portable devices and consumer electronics.
- Its low on-resistance and high current handling capability enable it to effectively reduce energy loss and improve system efficiency in small power switches.
2. **Battery-Powered Devices**:
- In battery-powered devices such as smartphones, tablets and other portable devices, this MOSFET can be used for switching and protecting battery power.
- It can ensure the efficiency and reliability of battery management systems and prevent over-discharge and over-charging.
3. **Load Switch**:
- Used in various load switching applications such as load control and electronic switches in switching power supplies.
- Its high current handling capability and low on-resistance help achieve efficient load control.
4. **DC-DC Converter**:
- In DC-DC converters, this MOSFET can be used as a switching element for efficient voltage conversion and power management.
- Suitable for switch control in buck converters and boost converters to improve conversion efficiency and stability.
5. **Automotive Electronics**:
- Suitable for switching and control applications in automotive electronic devices, such as on-board power management systems and lighting control systems.
- High temperature stability and reliability make it suitable for various electrical control tasks in automotive environments.
Through these application examples, **CEH2313-VB** MOSFET shows its importance in load switching and power management systems with high efficiency and high reliability requirements, and is an ideal choice for various small and medium-sized electronic devices.
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