CEG8208-VB Product details
Product introduction:
**CEG8208-VB** is a high-performance dual N-channel MOSFET in TSSOP8 package. This MOSFET uses Trench technology and is designed for high-density circuits, providing excellent switching performance and low on-resistance. Its low threshold voltage and excellent conduction characteristics make it perform well in a variety of applications. Due to its small package size, CEG8208-VB is particularly suitable for space-constrained electronic products.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
- **Model**: CEG8208-VB
- **Package**: TSSOP8
- **Configuration**: Common Source-N+N-Channel
- **Drain-Source Voltage (VDS)**: 20V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 0.5V~1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ (VGS=2.5V)
- 22mΩ (VGS=4.5V)
- **Maximum Drain Current (ID)**: 6.6A
- **Technology**: Trench technology
Domain and module applications:
1. **Portable electronic devices**:
The small package and low on-resistance of CEG8208-VB make it an ideal choice for portable electronic devices such as smartphones, tablets, etc. Its high switching speed and low power consumption ensure high efficiency and long battery life for these devices.
2. **DC-DC converter**:
In DC-DC converters, CEG8208-VB can be used as a switching element. Its low on-resistance and high current carrying capacity help improve conversion efficiency, reduce power consumption and heat generation, and are suitable for various power conversion applications.
3. **Power management module**:
For switch control in power management modules, CEG8208-VB provides efficient current switching capabilities and is suitable for use in battery management systems and voltage stabilization circuits to ensure stable power output and efficient power utilization.
4. **Motor Driver**:
In motor drivers, the high current carrying capability and low on-resistance of CEG8208-VB enable it to efficiently control the start-up and operation of motors. Its small package is also suitable for space-constrained motor control systems.
5. **LED Driver**:
This MOSFET is suitable for LED drivers, providing stable current control to ensure consistent brightness and long life of LED lamps. Low on-resistance and high switching speed help improve the overall efficiency of LED drivers.
6. **Communication Equipment**:
In communication equipment, such as wireless access points and switches, CEG8208-VB can be used for power management and signal conditioning. Its high current carrying capability and small package size meet the requirements of modern communication equipment for compact design and high performance.
CEG8208-VB is a dual N-channel MOSFET with high switching performance and low power consumption, which is widely used in portable electronic devices, DC-DC converters, power management modules, motor drivers, LED drivers and communication equipment. Its excellent electrical characteristics and compact package make it an ideal choice for these applications.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image