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CEF10N65-VB Product details
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CEF10N65-VB MOSFET Product Introduction
The CEF10N65-VB is a high voltage N-channel power MOSFET in a TO220F package with a drain-source voltage withstand capability of 650V and a continuous drain current handling capability of 10A. This MOSFET uses Plannar technology, providing good switching performance and reliability. Its 830mΩ on-resistance makes it suitable for applications requiring high voltage and medium current.
The CEF10N65-VB is a high voltage N-channel power MOSFET in a TO220F package with a drain-source voltage withstand capability of 650V and a continuous drain current handling capability of 10A. This MOSFET uses Plannar technology, providing good switching performance and reliability. Its 830mΩ on-resistance makes it suitable for applications requiring high voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
CEF10N65-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 830mΩ @ VGS=10V
- **Continuous drain current (ID)**: 10A
- **Technology**: Plannar technology
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 830mΩ @ VGS=10V
- **Continuous drain current (ID)**: 10A
- **Technology**: Plannar technology
Domain and module applications：
CEF10N65-VB Applications and Module Examples
1. **High-voltage power supply**: CEF10N65-VB is suitable for high-voltage power supply applications, such as 650V power modules and high-voltage power switches. It can be used as a high-voltage switching element to provide reliable switching control in high-voltage DC-DC converters and switching power supplies.
2. **Power inverter**: In power inverters, CEF10N65-VB can be used for switching control on the high-voltage side. Its high-voltage withstand capability makes it suitable for high-voltage switching operations in power inverters.
3. **Motor drive**: CEF10N65-VB can be used for switching control in motor drive systems, especially in high-voltage applications. It can be used as a switching element in high-voltage motor drive circuits.
4. **Industrial power system**: In industrial power systems, CEF10N65-VB can be used as a high-voltage switching element for power management in high-voltage environments. It performs well in industrial automation and power control modules.
5. **Lighting systems**: This MOSFET is suitable for high-voltage lighting systems such as street lighting and industrial lighting. Its high voltage handling capability makes it suitable for switching control of high-voltage lamps.
6. **Power factor correction (PFC) circuit**: CEF10N65-VB can be used in power factor correction circuits to help improve the power factor and reduce power losses. Its high voltage handling capability makes it suitable for switching operations in PFC modules.
In summary, CEF10N65-VB is a high-voltage N-channel power MOSFET suitable for high-voltage power supplies, power inverters, motor drives, industrial power systems, lighting systems, and power factor correction. Its high voltage handling capability and good switching performance make it excel in these applications.
1. **High-voltage power supply**: CEF10N65-VB is suitable for high-voltage power supply applications, such as 650V power modules and high-voltage power switches. It can be used as a high-voltage switching element to provide reliable switching control in high-voltage DC-DC converters and switching power supplies.
2. **Power inverter**: In power inverters, CEF10N65-VB can be used for switching control on the high-voltage side. Its high-voltage withstand capability makes it suitable for high-voltage switching operations in power inverters.
3. **Motor drive**: CEF10N65-VB can be used for switching control in motor drive systems, especially in high-voltage applications. It can be used as a switching element in high-voltage motor drive circuits.
4. **Industrial power system**: In industrial power systems, CEF10N65-VB can be used as a high-voltage switching element for power management in high-voltage environments. It performs well in industrial automation and power control modules.
5. **Lighting systems**: This MOSFET is suitable for high-voltage lighting systems such as street lighting and industrial lighting. Its high voltage handling capability makes it suitable for switching control of high-voltage lamps.
6. **Power factor correction (PFC) circuit**: CEF10N65-VB can be used in power factor correction circuits to help improve the power factor and reduce power losses. Its high voltage handling capability makes it suitable for switching operations in PFC modules.
In summary, CEF10N65-VB is a high-voltage N-channel power MOSFET suitable for high-voltage power supplies, power inverters, motor drives, industrial power systems, lighting systems, and power factor correction. Its high voltage handling capability and good switching performance make it excel in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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