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CEF07N7-VB Product details
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CEF07N7-VB MOSFET Product Introduction
**Model**: CEF07N7-VB
**Package**: TO220F
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 700V
**Maximum gate-source voltage (VGS)**: ±30V
**Threshold voltage (Vth)**: 3.5V
**On-resistance (RDS(ON))**: 1100mΩ@VGS=10V
**Maximum drain current (ID)**: 5A
**Technology**: SJ_Multi-EPI
CEF07N7-VB is a high-voltage single N-channel MOSFET, using SJ_Multi-EPI technology and packaged in TO220F. Its high withstand voltage characteristics and relatively low on-resistance make it suitable for handling high voltage, high power applications. Designed to provide reliable switching function under high voltage and high current conditions, it is suitable for a variety of industrial and power electronics applications.
**Model**: CEF07N7-VB
**Package**: TO220F
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 700V
**Maximum gate-source voltage (VGS)**: ±30V
**Threshold voltage (Vth)**: 3.5V
**On-resistance (RDS(ON))**: 1100mΩ@VGS=10V
**Maximum drain current (ID)**: 5A
**Technology**: SJ_Multi-EPI
CEF07N7-VB is a high-voltage single N-channel MOSFET, using SJ_Multi-EPI technology and packaged in TO220F. Its high withstand voltage characteristics and relatively low on-resistance make it suitable for handling high voltage, high power applications. Designed to provide reliable switching function under high voltage and high current conditions, it is suitable for a variety of industrial and power electronics applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V (typical)
- **On-resistance (RDS(ON))**:
- 1100mΩ@VGS=10V
- **Maximum drain current (ID)**: 5A
- **Drain-source breakdown voltage (BVDSS)**: 700V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±30V
- **Power dissipation (Ptot)**: 40W
- **Junction-to-ambient thermal resistance (RθJA)**: 60°C/W
- **Junction-to-Case Thermal Resistance (RθJC)**: 3°C/W
- **Operating Junction Temperature Range**: -55°C to +150°C
- **Storage Temperature Range**: -55°C to +150°C
- **Technology**: SJ_Multi-EPI
- **Package type**: TO220F
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V (typical)
- **On-resistance (RDS(ON))**:
- 1100mΩ@VGS=10V
- **Maximum drain current (ID)**: 5A
- **Drain-source breakdown voltage (BVDSS)**: 700V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±30V
- **Power dissipation (Ptot)**: 40W
- **Junction-to-ambient thermal resistance (RθJA)**: 60°C/W
- **Junction-to-Case Thermal Resistance (RθJC)**: 3°C/W
- **Operating Junction Temperature Range**: -55°C to +150°C
- **Storage Temperature Range**: -55°C to +150°C
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
1. **High-voltage power switch**: The high withstand voltage capability of CEF07N7-VB makes it very suitable for use as a switching component in high-voltage power supplies. In power converters and high-voltage power modules, it can effectively control the flow of current and operate stably at high voltages.
2. **Power inverter**: In power inverters, CEF07N7-VB acts as a high-voltage switch to convert power from solar panels or other high-voltage sources. Its high withstand voltage and relatively low on-resistance enable it to operate reliably at high voltages, ensuring the efficiency and stability of the inverter.
3. **Industrial motor drive**: Used for switch control in high-voltage motor drive systems, this MOSFET is able to handle the high voltage and current generated by the motor during startup and operation, ensuring the smooth operation of the motor drive system and protecting the motor from overvoltage damage.
4. **Electrical protection system**: CEF07N7-VB can be used as a switching device in high-voltage protection circuits, such as overvoltage protection circuits. Its high withstand voltage capability can effectively prevent overvoltage from damaging other components in the circuit.
5. **High voltage power converter**: In high voltage power converters, CEF07N7-VB can handle applications with input voltages up to 700V, converting high voltage DC to the required low voltage DC, and providing stable power for various electronic devices.
6. **Power management system**: This MOSFET is suitable for high voltage power management systems, which can control and switch power in high voltage environments, effectively manage power flow, and improve the energy efficiency and reliability of the system.
The high withstand voltage capability and moderate on-resistance of CEF07N7-VB enable it to perform well in applications such as high voltage power switches, power inverters, industrial motor drives, electrical protection systems, high voltage power converters, and power management systems, providing reliable solutions.
1. **High-voltage power switch**: The high withstand voltage capability of CEF07N7-VB makes it very suitable for use as a switching component in high-voltage power supplies. In power converters and high-voltage power modules, it can effectively control the flow of current and operate stably at high voltages.
2. **Power inverter**: In power inverters, CEF07N7-VB acts as a high-voltage switch to convert power from solar panels or other high-voltage sources. Its high withstand voltage and relatively low on-resistance enable it to operate reliably at high voltages, ensuring the efficiency and stability of the inverter.
3. **Industrial motor drive**: Used for switch control in high-voltage motor drive systems, this MOSFET is able to handle the high voltage and current generated by the motor during startup and operation, ensuring the smooth operation of the motor drive system and protecting the motor from overvoltage damage.
4. **Electrical protection system**: CEF07N7-VB can be used as a switching device in high-voltage protection circuits, such as overvoltage protection circuits. Its high withstand voltage capability can effectively prevent overvoltage from damaging other components in the circuit.
5. **High voltage power converter**: In high voltage power converters, CEF07N7-VB can handle applications with input voltages up to 700V, converting high voltage DC to the required low voltage DC, and providing stable power for various electronic devices.
6. **Power management system**: This MOSFET is suitable for high voltage power management systems, which can control and switch power in high voltage environments, effectively manage power flow, and improve the energy efficiency and reliability of the system.
The high withstand voltage capability and moderate on-resistance of CEF07N7-VB enable it to perform well in applications such as high voltage power switches, power inverters, industrial motor drives, electrical protection systems, high voltage power converters, and power management systems, providing reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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