CED730G-VB Product details
Product introduction:
CED730G-VB is a high voltage N-channel MOSFET produced by Nexperia, using TO251 package and SJ_Multi-EPI technology. With a high withstand voltage of 650V and low on-resistance, the device is suitable for various high voltage application scenarios such as power management and conversion equipment. Its efficient switching performance and reliable electrical characteristics make it excel in fields such as load control and power conversion.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
| Parameter| Value|
|---------------------|----------------------------------|
| Package| TO251 |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 950mΩ @ VGS=10V |
| Maximum drain current (ID) | 5A |
| Technology| SJ_Multi-EPI |
Domain and module applications:
CED730G-VB MOSFET has a wide range of applications in the following fields and modules:
1. **Power management**:
- **High-voltage switch power supply (SMPS)**: CED730G-VB is suitable for key switching components in high-voltage switch power supplies, and can efficiently handle high voltages in the power conversion process to ensure system stability and high efficiency.
- **High-voltage DC-DC converter**: In high-voltage DC-DC converters, the low on-resistance of CED730G-VB can reduce energy loss and improve conversion efficiency, and is suitable for various high-voltage power conversion applications.
2. **Power switch**:
- **Industrial equipment drive**: In industrial equipment drive systems, CED730G-VB can be used as a power switch to handle high voltage and medium current loads to ensure reliable operation of the equipment.
- **High-voltage load control**: Suitable for applications that require control of high-voltage loads, such as load switches in industrial automation equipment and power systems, providing stable load control capabilities.
3. **Battery protection**:
- **High-voltage battery management system**: In the high-voltage battery management system, CED730G-VB can provide high-voltage protection to prevent battery overload, while its low on-resistance improves battery efficiency.
- **High-voltage charger circuit**: In the high-voltage battery charger, CED730G-VB can be used to handle high voltage and medium current charging processes to ensure safe and efficient charging.
4. **High-efficiency switching**:
- **High-voltage power module**: Used in the switch part of the high-voltage power module, CED730G-VB can efficiently handle power switching to ensure the stability and performance of the module.
- **High-voltage power regulator**: In various high-voltage power regulators, such as LED drivers and power control, CED730G-VB provides efficient switching performance and reliable electrical characteristics.
In short, CED730G-VB MOSFET is suitable for a variety of high voltage applications such as power management, power switching, battery protection and high-performance switching due to its high voltage withstand capability and high performance.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image