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CED630N-VB Product details
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Product Introduction
CED630N-VB is a high-performance single N-channel power MOSFET with a TO251 package. This MOSFET uses Trench technology and has the characteristics of high breakdown voltage, low on-resistance and high current carrying capacity. CED630N-VB can withstand a drain-source voltage (VDS) of up to 200V and a gate-source voltage (VGS) of ±20V, suitable for a variety of power and switching applications. Its design ensures efficient power conversion and reliable circuit control, and is an ideal switching element in various electronic devices.
CED630N-VB is a high-performance single N-channel power MOSFET with a TO251 package. This MOSFET uses Trench technology and has the characteristics of high breakdown voltage, low on-resistance and high current carrying capacity. CED630N-VB can withstand a drain-source voltage (VDS) of up to 200V and a gate-source voltage (VGS) of ±20V, suitable for a variety of power and switching applications. Its design ensures efficient power conversion and reliable circuit control, and is an ideal switching element in various electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 270mΩ @ VGS = 10V
- **Drain current (ID)**: 8A
- **Technology type**: Trench
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 270mΩ @ VGS = 10V
- **Drain current (ID)**: 8A
- **Technology type**: Trench
Domain and module applications：
Application fields and module examples
The design features of CED630N-VB make it superior in the following fields and modules:
1. **Power management**: CED630N-VB is suitable for various power management circuits, such as DC-DC converters and voltage regulators. It can effectively control the current, improve system efficiency and reduce energy loss.
2. **Switching power supply**: In switching power supply applications, this MOSFET provides reliable high-voltage switching function. Its high breakdown voltage and low on-resistance ensure stability and efficient power conversion under high voltage.
3. **Lighting control**: CED630N-VB can be used in LED drive circuits and lighting control systems. It can efficiently regulate current to ensure stable operation and energy saving of lighting equipment.
4. **Motor drive**: In motor drive applications, this MOSFET can be used to control the start and stop of the motor. Its high current carrying capacity and low on-resistance ensure the reliability and efficiency of the motor operation.
5. **Inverters and Converters**: The CED630N-VB excels in inverters and AC-DC and DC-DC converters. Its high-voltage operation capability and low RDS(ON) enable efficient power conversion for applications such as solar inverters and industrial power supplies.
6. **Protection Circuits**: This MOSFET is also suitable for overcurrent protection circuits. It can quickly respond to overcurrent conditions to protect sensitive electronic equipment from damage.
These application examples of the CED630N-VB demonstrate its excellent performance in high-voltage switching and power management, making it a key component in a variety of high-efficiency power and control applications.
The design features of CED630N-VB make it superior in the following fields and modules:
1. **Power management**: CED630N-VB is suitable for various power management circuits, such as DC-DC converters and voltage regulators. It can effectively control the current, improve system efficiency and reduce energy loss.
2. **Switching power supply**: In switching power supply applications, this MOSFET provides reliable high-voltage switching function. Its high breakdown voltage and low on-resistance ensure stability and efficient power conversion under high voltage.
3. **Lighting control**: CED630N-VB can be used in LED drive circuits and lighting control systems. It can efficiently regulate current to ensure stable operation and energy saving of lighting equipment.
4. **Motor drive**: In motor drive applications, this MOSFET can be used to control the start and stop of the motor. Its high current carrying capacity and low on-resistance ensure the reliability and efficiency of the motor operation.
5. **Inverters and Converters**: The CED630N-VB excels in inverters and AC-DC and DC-DC converters. Its high-voltage operation capability and low RDS(ON) enable efficient power conversion for applications such as solar inverters and industrial power supplies.
6. **Protection Circuits**: This MOSFET is also suitable for overcurrent protection circuits. It can quickly respond to overcurrent conditions to protect sensitive electronic equipment from damage.
These application examples of the CED630N-VB demonstrate its excellent performance in high-voltage switching and power management, making it a key component in a variety of high-efficiency power and control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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