中文
English
CED6031L-VB Product details
Back to previous pageProduct introduction：
CED6031L-VB MOSFET Product Introduction
CED6031L-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage and high current applications. It supports a maximum drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and has an extremely low on-resistance (RDS(ON)) of 5mΩ at a gate voltage of 10V. Its maximum drain current (ID) reaches 80A, and it uses Trench technology to provide users with high-efficiency and high-reliability switching solutions.
CED6031L-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage and high current applications. It supports a maximum drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and has an extremely low on-resistance (RDS(ON)) of 5mΩ at a gate voltage of 10V. Its maximum drain current (ID) reaches 80A, and it uses Trench technology to provide users with high-efficiency and high-reliability switching solutions.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package**: TO252
- **Description**: The TO252 package is a surface mount package suitable for medium power MOSFETs, with good heat dissipation and mechanical stability, suitable for handling high current applications.
2. **Configuration**: Single N-channel
- **Description**: The CED6031L-VB is a single N-channel MOSFET suitable for circuits that need to switch and regulate current, especially in low voltage and high current applications.
3. **VDS (Drain-Source Voltage)**: 30V
- **Description**: The maximum drain-source voltage of this MOSFET is 30V, which is suitable for low to medium voltage applications and can provide efficient switching performance at relatively low voltages.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: The supported gate-source voltage range is ±20V, ensuring stable operation of the MOSFET under different driving conditions.
5. **Vth (Threshold Voltage)**: 1.7V
- **Description**: The threshold voltage is 1.7V, indicating that the MOSFET starts to turn on at this voltage. The lower threshold voltage helps achieve fast switching at low gate voltages.
6. **RDS(ON) (On-Resistance)**: 6mΩ @ VGS = 4.5V
- **Description**: At a gate voltage of 4.5V, the on-resistance is 6mΩ, providing very low on-resistance, helping to reduce power consumption and improve circuit efficiency.
7. **RDS(ON) (On-Resistance)**: 5mΩ @ VGS = 10V
- **Description**: At a gate voltage of 10V, the on-resistance is further reduced to 5mΩ, further improving switching efficiency and suitable for high-performance applications.
8. **ID (Continuous Drain Current)**: 80A
- **Description**: The maximum continuous drain current of the MOSFET is 80A, which can handle high current loads and is suitable for circuits that require high current.
9. **Technology**: Trench
- **Description**: MOSFETs using Trench technology provide low on-resistance and high switching speed, which helps improve the overall efficiency and performance of the circuit.
1. **Package**: TO252
- **Description**: The TO252 package is a surface mount package suitable for medium power MOSFETs, with good heat dissipation and mechanical stability, suitable for handling high current applications.
2. **Configuration**: Single N-channel
- **Description**: The CED6031L-VB is a single N-channel MOSFET suitable for circuits that need to switch and regulate current, especially in low voltage and high current applications.
3. **VDS (Drain-Source Voltage)**: 30V
- **Description**: The maximum drain-source voltage of this MOSFET is 30V, which is suitable for low to medium voltage applications and can provide efficient switching performance at relatively low voltages.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: The supported gate-source voltage range is ±20V, ensuring stable operation of the MOSFET under different driving conditions.
5. **Vth (Threshold Voltage)**: 1.7V
- **Description**: The threshold voltage is 1.7V, indicating that the MOSFET starts to turn on at this voltage. The lower threshold voltage helps achieve fast switching at low gate voltages.
6. **RDS(ON) (On-Resistance)**: 6mΩ @ VGS = 4.5V
- **Description**: At a gate voltage of 4.5V, the on-resistance is 6mΩ, providing very low on-resistance, helping to reduce power consumption and improve circuit efficiency.
7. **RDS(ON) (On-Resistance)**: 5mΩ @ VGS = 10V
- **Description**: At a gate voltage of 10V, the on-resistance is further reduced to 5mΩ, further improving switching efficiency and suitable for high-performance applications.
8. **ID (Continuous Drain Current)**: 80A
- **Description**: The maximum continuous drain current of the MOSFET is 80A, which can handle high current loads and is suitable for circuits that require high current.
9. **Technology**: Trench
- **Description**: MOSFETs using Trench technology provide low on-resistance and high switching speed, which helps improve the overall efficiency and performance of the circuit.
Domain and module applications：
Application Examples
1. **Power Management**:
- CED6031L-VB can effectively switch and regulate current in power management systems such as DC-DC converters and power modules. Its ultra-low on-resistance and high current handling capability ensure high efficiency and reliability of power conversion.
2. **Switching Power Supply**:
- In switching power supply design, CED6031L-VB can be used as an efficient switching element to support high-frequency switching operations. Its low RDS(ON) and high current capability make it an excellent performer in high-efficiency switching power supplies.
3. **Motor Drive**:
- In motor drive circuits, CED6031L-VB can effectively control the switching of high-current motors and provide stable drive current. Its high current capability and low on-resistance make it suitable for high-power motor control applications.
4. **LED Driver**:
- In LED driver circuits, CED6031L-VB can be used to drive high-power LEDs. Its high current handling capability and low on-resistance ensure stable light emission and high efficiency of LEDs.
5. **Industrial Control**:
- In industrial control systems, CED6031L-VB can be used for current control and switching applications such as motor control and power switching. Its reliability and high current capability make it suitable for current switching tasks in various industrial automation equipment.
6. **Automotive Electronics**:
- In automotive electronic systems, such as battery management and electric drive control, CED6031L-VB's high current handling capability and low on-resistance support reliable current switching and control, meeting the performance requirements in automotive applications.
The CED6031L-VB MOSFET's trench technology, high switching efficiency and high current handling capability make it have broad application prospects in power management, switching power supply, motor drive, LED drive, industrial control and automotive electronics.
1. **Power Management**:
- CED6031L-VB can effectively switch and regulate current in power management systems such as DC-DC converters and power modules. Its ultra-low on-resistance and high current handling capability ensure high efficiency and reliability of power conversion.
2. **Switching Power Supply**:
- In switching power supply design, CED6031L-VB can be used as an efficient switching element to support high-frequency switching operations. Its low RDS(ON) and high current capability make it an excellent performer in high-efficiency switching power supplies.
3. **Motor Drive**:
- In motor drive circuits, CED6031L-VB can effectively control the switching of high-current motors and provide stable drive current. Its high current capability and low on-resistance make it suitable for high-power motor control applications.
4. **LED Driver**:
- In LED driver circuits, CED6031L-VB can be used to drive high-power LEDs. Its high current handling capability and low on-resistance ensure stable light emission and high efficiency of LEDs.
5. **Industrial Control**:
- In industrial control systems, CED6031L-VB can be used for current control and switching applications such as motor control and power switching. Its reliability and high current capability make it suitable for current switching tasks in various industrial automation equipment.
6. **Automotive Electronics**:
- In automotive electronic systems, such as battery management and electric drive control, CED6031L-VB's high current handling capability and low on-resistance support reliable current switching and control, meeting the performance requirements in automotive applications.
The CED6031L-VB MOSFET's trench technology, high switching efficiency and high current handling capability make it have broad application prospects in power management, switching power supply, motor drive, LED drive, industrial control and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
