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CED5175-VB Product details
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CED5175-VB MOSFET Product Introduction
**Model**: CED5175-VB
**Package**: TO251
**Configuration**: Single P-channel
**Maximum drain-source voltage (VDS)**: -60V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: -2.5V
**On-resistance (RDS(ON)）**:
- 17mΩ@VGS=4.5V
- 13mΩ@VGS=10V
**Maximum drain current (ID)**: -50A
**Technology**: Trench
CED5175-VB is a high current, high efficiency single P-channel MOSFET designed using Trench technology. This MOSFET offers extremely low on-resistance and high withstand voltage capability in a TO251 package for applications requiring high current and low power consumption. Its high current capability and low on-resistance make it ideal for a variety of high-performance power and load switching applications.
**Model**: CED5175-VB
**Package**: TO251
**Configuration**: Single P-channel
**Maximum drain-source voltage (VDS)**: -60V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: -2.5V
**On-resistance (RDS(ON)）**:
- 17mΩ@VGS=4.5V
- 13mΩ@VGS=10V
**Maximum drain current (ID)**: -50A
**Technology**: Trench
CED5175-VB is a high current, high efficiency single P-channel MOSFET designed using Trench technology. This MOSFET offers extremely low on-resistance and high withstand voltage capability in a TO251 package for applications requiring high current and low power consumption. Its high current capability and low on-resistance make it ideal for a variety of high-performance power and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -2.5V | -50A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -2.5V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -2.5V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
Detailed parameter description
- **Package type**: TO251
- **Channel type**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2.5V (typical)
- **On-resistance (RDS(ON))**:
- 17mΩ@VGS=4.5V
- 13mΩ@VGS=10V
- **Maximum drain current (ID)**: -50A
- **Drain-source breakdown voltage (BVDSS)**: -60V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 75W
- **Junction-to-ambient thermal resistance (RθJA)**: 50°C/W
- **Junction-to-case thermal resistance (RθJC)**: 2.5°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Package type**: TO251
- **Channel type**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2.5V (typical)
- **On-resistance (RDS(ON))**:
- 17mΩ@VGS=4.5V
- 13mΩ@VGS=10V
- **Maximum drain current (ID)**: -50A
- **Drain-source breakdown voltage (BVDSS)**: -60V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 75W
- **Junction-to-ambient thermal resistance (RθJA)**: 50°C/W
- **Junction-to-case thermal resistance (RθJC)**: 2.5°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power switch**: The low on-resistance and high current capability of CED5175-VB make it ideal for power switching applications. In power switching circuits, it can efficiently switch loads, reduce power consumption and improve overall system efficiency.
2. **DC-DC converter**: In DC-DC converters, CED5175-VB can effectively handle high currents and optimize conversion efficiency as a synchronous rectifier or switch tube. Its low RDS(ON) helps reduce energy loss and improve system conversion efficiency and stability.
3. **Load switch**: This MOSFET performs well in load switching applications, can handle high current loads and provide low on-resistance, reducing energy loss. It can provide reliable performance in the switching control of high power loads.
4. **Battery management system**: In battery management systems, CED5175-VB can be used as a switch and load control for batteries, especially for scenarios that require high current and low power consumption. Its high current capability and low on-resistance can optimize the battery charging and discharging process.
5. **Electric and hybrid vehicles**: The high current capability of CED5175-VB makes it suitable for high-power switching and load control applications in electric and hybrid vehicles. In automotive electronic systems, it provides stable switching performance and low power consumption characteristics.
6. **LED driver**: In LED driving applications, the low RDS(ON) characteristics of CED5175-VB can improve the brightness and energy efficiency of LED lights. It can stably drive high-power LEDs and reduce energy losses.
7. **Household appliances**: This MOSFET is also suitable for switch control in household appliances, such as motor control, heater control, etc. Its high current capability and low on-resistance can improve the performance and reliability of household appliances.
The high current handling capability and low power consumption of CED5175-VB enable it to perform well in power switches, DC-DC converters, load switches, battery management systems, electric vehicles, LED drivers, and home appliances, providing a reliable solution for a variety of high-performance needs.
1. **Power switch**: The low on-resistance and high current capability of CED5175-VB make it ideal for power switching applications. In power switching circuits, it can efficiently switch loads, reduce power consumption and improve overall system efficiency.
2. **DC-DC converter**: In DC-DC converters, CED5175-VB can effectively handle high currents and optimize conversion efficiency as a synchronous rectifier or switch tube. Its low RDS(ON) helps reduce energy loss and improve system conversion efficiency and stability.
3. **Load switch**: This MOSFET performs well in load switching applications, can handle high current loads and provide low on-resistance, reducing energy loss. It can provide reliable performance in the switching control of high power loads.
4. **Battery management system**: In battery management systems, CED5175-VB can be used as a switch and load control for batteries, especially for scenarios that require high current and low power consumption. Its high current capability and low on-resistance can optimize the battery charging and discharging process.
5. **Electric and hybrid vehicles**: The high current capability of CED5175-VB makes it suitable for high-power switching and load control applications in electric and hybrid vehicles. In automotive electronic systems, it provides stable switching performance and low power consumption characteristics.
6. **LED driver**: In LED driving applications, the low RDS(ON) characteristics of CED5175-VB can improve the brightness and energy efficiency of LED lights. It can stably drive high-power LEDs and reduce energy losses.
7. **Household appliances**: This MOSFET is also suitable for switch control in household appliances, such as motor control, heater control, etc. Its high current capability and low on-resistance can improve the performance and reliability of household appliances.
The high current handling capability and low power consumption of CED5175-VB enable it to perform well in power switches, DC-DC converters, load switches, battery management systems, electric vehicles, LED drivers, and home appliances, providing a reliable solution for a variety of high-performance needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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