CED4301-VB Product details
Product introduction:
CED4301-VB is a high performance single P-channel power MOSFET packaged in TO251 using Trench technology. It has a drain-source voltage withstand capability of up to -40V, and a very low on-resistance (10mΩ @ VGS=10V), suitable for applications requiring efficient negative voltage control. Its design enables it to handle currents up to -55A, suitable for high power and high efficiency switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -40V | -2V | -55A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -40V | -2V | -55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -40V | -2V | -55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
- **Package type**: TO251
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Continuous drain current (ID)**: -55A
- **Technology**: Trench technology
Domain and module applications:
1. **High-efficiency power switch**: The low on-resistance and high current handling capability of CED4301-VB make it ideal for use as a high-efficiency power switch. It can provide stable switching performance in a negative voltage environment, reduce power consumption, and improve power conversion efficiency.
2. **Battery management system**: In a battery management system, CED4301-VB can be used to control the charging and discharging process of the battery. Its high current capability and low on-resistance can optimize the performance of the battery and extend the battery life.
3. **Power inverter**: In a power inverter, CED4301-VB can be used as a switching element in the negative voltage path. Its low on-resistance ensures high-efficiency power conversion and is suitable for inverter applications that require high power handling.
4. **Motor drive**: In a motor drive system, CED4301-VB can be used as a negative voltage control switch to support the driving needs of high-power motors. Its high current handling capability can meet the high current requirements of motor startup and operation.
5. **Load Switch**: For load switch applications that require negative voltage, CED4301-VB provides excellent switching performance and low power consumption. Its high current carrying capacity and low on-resistance enable it to efficiently control load current.
6. **High Power Switch Application**: CED4301-VB is designed specifically for high power switch applications such as power adapters, chargers, and high power power modules. Its high current handling capability and low on-resistance enable it to effectively control high power loads.
In general, CED4301-VB is a high performance P-channel power MOSFET suitable for multiple fields such as high efficiency power switch, battery management system, power inverter, motor drive, load switch, and high power switch applications. Its low on-resistance and high current capability enable it to perform well in negative voltage control environments.
Technical support:
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