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CED40N10-VB Product details
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CED40N10-VB MOSFET Product Introduction
CED40N10-VB is a high-performance N-channel MOSFET in TO251 package, designed for medium-to-high voltage and high current applications. Its drain-source voltage (VDS) can reach up to 100V, the gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 1.8V. At a gate voltage of 10V, the on-resistance (RDS(ON)) is 36mΩ and the maximum drain current (ID) is 35A. Using Trench technology, this MOSFET has excellent switching performance and low on-resistance, suitable for circuits that require high current handling and high efficiency.
CED40N10-VB is a high-performance N-channel MOSFET in TO251 package, designed for medium-to-high voltage and high current applications. Its drain-source voltage (VDS) can reach up to 100V, the gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 1.8V. At a gate voltage of 10V, the on-resistance (RDS(ON)) is 36mΩ and the maximum drain current (ID) is 35A. Using Trench technology, this MOSFET has excellent switching performance and low on-resistance, suitable for circuits that require high current handling and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package**: TO251
- **Description**: The TO251 package is a commonly used medium-power MOSFET package suitable for surface mount applications, providing good heat dissipation and mechanical stability, and capable of handling medium-power currents.
2. **Configuration**: Single N-channel
- **Description**: The CED40N10-VB is a single N-channel MOSFET suitable for circuits that require switching and regulating current. This configuration enables the MOSFET to operate stably in a high-voltage environment and provide efficient switching performance.
3. **VDS (Drain-Source Voltage)**: 100V
- **Description**: The maximum drain-source voltage of this MOSFET is 100V, which is suitable for medium and high voltage applications and can handle higher voltages without damage.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: The supported gate-source voltage range is ±20V, allowing the MOSFET to operate stably under different driving conditions.
5. **Vth (Threshold Voltage)**: 1.8V
- **Description**: The threshold voltage is 1.8V, indicating that the MOSFET starts to turn on at this voltage. The lower threshold voltage helps achieve fast switching at low gate voltages.
6. **RDS(ON) (On-Resistance)**: 36mΩ @ VGS = 10V
- **Description**: At a gate voltage of 10V, the on-resistance is 36mΩ, providing a lower on-resistance, which helps reduce power consumption and improve circuit efficiency.
7. **ID (Continuous Drain Current)**: 35A
- **Description**: The MOSFET has a maximum continuous drain current of 35A, making it suitable for applications that need to handle higher currents.
8. **Technology**: Trench
- **Description**: MOSFETs using Trench technology offer low on-resistance and high switching speeds, helping to improve the overall efficiency and performance of the circuit.
1. **Package**: TO251
- **Description**: The TO251 package is a commonly used medium-power MOSFET package suitable for surface mount applications, providing good heat dissipation and mechanical stability, and capable of handling medium-power currents.
2. **Configuration**: Single N-channel
- **Description**: The CED40N10-VB is a single N-channel MOSFET suitable for circuits that require switching and regulating current. This configuration enables the MOSFET to operate stably in a high-voltage environment and provide efficient switching performance.
3. **VDS (Drain-Source Voltage)**: 100V
- **Description**: The maximum drain-source voltage of this MOSFET is 100V, which is suitable for medium and high voltage applications and can handle higher voltages without damage.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: The supported gate-source voltage range is ±20V, allowing the MOSFET to operate stably under different driving conditions.
5. **Vth (Threshold Voltage)**: 1.8V
- **Description**: The threshold voltage is 1.8V, indicating that the MOSFET starts to turn on at this voltage. The lower threshold voltage helps achieve fast switching at low gate voltages.
6. **RDS(ON) (On-Resistance)**: 36mΩ @ VGS = 10V
- **Description**: At a gate voltage of 10V, the on-resistance is 36mΩ, providing a lower on-resistance, which helps reduce power consumption and improve circuit efficiency.
7. **ID (Continuous Drain Current)**: 35A
- **Description**: The MOSFET has a maximum continuous drain current of 35A, making it suitable for applications that need to handle higher currents.
8. **Technology**: Trench
- **Description**: MOSFETs using Trench technology offer low on-resistance and high switching speeds, helping to improve the overall efficiency and performance of the circuit.
Domain and module applications：
Application Examples
1. **Power Management**:
- CED40N10-VB can effectively switch and regulate current in power management systems such as DC-DC converters and power modules. Its low on-resistance and high current handling capability make it suitable for high-efficiency power conversion and current regulation applications.
2. **Switching Power Supply**:
- In switching power supply design, CED40N10-VB can be used as an efficient switching element to support high-frequency switching operations. Its low RDS(ON) and high current capability ensure the high efficiency and reliability of the switching power supply.
3. **Motor Drive**:
- In motor drive circuits, CED40N10-VB can effectively control the switching of high-current motors and provide stable drive current. Its high current handling capability and low on-resistance make it suitable for high-power motor control applications.
4. **LED Driver**:
- In LED driver circuits, CED40N10-VB can be used to drive high-power LEDs. Its high current capability and low on-resistance ensure stable light emission and high efficiency of LEDs.
5. **Industrial Control**:
- In industrial control systems, CED40N10-VB can be used for current control and switching applications such as motor control and power switching. Its reliability and high current capability make it suitable for current switching tasks in various industrial automation equipment.
6. **Automotive Electronics**:
- In automotive electronic systems, such as battery management and electric drive control, CED40N10-VB's high current handling capability and low on-resistance support reliable current switching and control, meeting the performance requirements in automotive applications.
The CED40N10-VB MOSFET's trench technology, high switching efficiency and high current handling capability make it have broad application prospects in power management, switching power supply, motor drive, LED drive, industrial control and automotive electronics.
1. **Power Management**:
- CED40N10-VB can effectively switch and regulate current in power management systems such as DC-DC converters and power modules. Its low on-resistance and high current handling capability make it suitable for high-efficiency power conversion and current regulation applications.
2. **Switching Power Supply**:
- In switching power supply design, CED40N10-VB can be used as an efficient switching element to support high-frequency switching operations. Its low RDS(ON) and high current capability ensure the high efficiency and reliability of the switching power supply.
3. **Motor Drive**:
- In motor drive circuits, CED40N10-VB can effectively control the switching of high-current motors and provide stable drive current. Its high current handling capability and low on-resistance make it suitable for high-power motor control applications.
4. **LED Driver**:
- In LED driver circuits, CED40N10-VB can be used to drive high-power LEDs. Its high current capability and low on-resistance ensure stable light emission and high efficiency of LEDs.
5. **Industrial Control**:
- In industrial control systems, CED40N10-VB can be used for current control and switching applications such as motor control and power switching. Its reliability and high current capability make it suitable for current switching tasks in various industrial automation equipment.
6. **Automotive Electronics**:
- In automotive electronic systems, such as battery management and electric drive control, CED40N10-VB's high current handling capability and low on-resistance support reliable current switching and control, meeting the performance requirements in automotive applications.
The CED40N10-VB MOSFET's trench technology, high switching efficiency and high current handling capability make it have broad application prospects in power management, switching power supply, motor drive, LED drive, industrial control and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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