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CED3423-VB Product details
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1. Product Introduction
**CED3423-VB** is a high-efficiency P-channel MOSFET in TO251 package. This MOSFET is manufactured using Trench technology and has excellent switching performance and low on-resistance (RDS(ON)), suitable for operation at a drain-source voltage of -30V. Its threshold voltage (Vth) is -1.7V, allowing it to conduct effectively at a lower gate-source voltage. The maximum drain current (ID) is -20A, suitable for applications requiring high current handling capabilities.
**CED3423-VB** is a high-efficiency P-channel MOSFET in TO251 package. This MOSFET is manufactured using Trench technology and has excellent switching performance and low on-resistance (RDS(ON)), suitable for operation at a drain-source voltage of -30V. Its threshold voltage (Vth) is -1.7V, allowing it to conduct effectively at a lower gate-source voltage. The maximum drain current (ID) is -20A, suitable for applications requiring high current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -20A | 56mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
II. Detailed parameter description
- **Model**: CED3423-VB
- **Package**: TO251
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 72mΩ @ VGS = 4.5V
- 56mΩ @ VGS = 10V
- **Drain current (ID)**: -20A
- **Technology**: Trench
- **Model**: CED3423-VB
- **Package**: TO251
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 72mΩ @ VGS = 4.5V
- 56mΩ @ VGS = 10V
- **Drain current (ID)**: -20A
- **Technology**: Trench
Domain and module applications：
3. Applicable fields and modules
The characteristics of **CED3423-VB** make it suitable for multiple fields and modules. The specific applications are as follows:
1. **Power switch**: In power management systems, this MOSFET can be used as a high current switch, especially suitable for low voltage and high current switching applications. For example, high-efficiency switches in power inverters and DC-DC converters.
2. **Load switch**: In various load switch applications, such as motor control and power management systems, CED3423-VB provides the necessary current handling capability and low on-resistance, ensuring efficient load switching and stability.
3. **Automotive electronics**: In automotive electronic devices, such as battery management systems and electric vehicle chargers, CED3423-VB's high current handling capability and low on-resistance ensure reliable power switching and current control.
4. **Consumer electronics**: In consumer electronics products, such as switching power supplies and battery protection circuits, the high efficiency and low on-resistance of this MOSFET can effectively improve the performance of the device and extend battery life.
5. **Communication equipment**: In the power module of communication equipment, the efficient switching performance and stable current handling capability of CED3423-VB ensure the reliability and efficiency of communication equipment.
**CED3423-VB** provides efficient and stable switching performance through its high current carrying capacity, low on-resistance and moderate drain-source voltage, and is widely used in power management, load switching, automotive electronics, consumer electronics and communication equipment.
The characteristics of **CED3423-VB** make it suitable for multiple fields and modules. The specific applications are as follows:
1. **Power switch**: In power management systems, this MOSFET can be used as a high current switch, especially suitable for low voltage and high current switching applications. For example, high-efficiency switches in power inverters and DC-DC converters.
2. **Load switch**: In various load switch applications, such as motor control and power management systems, CED3423-VB provides the necessary current handling capability and low on-resistance, ensuring efficient load switching and stability.
3. **Automotive electronics**: In automotive electronic devices, such as battery management systems and electric vehicle chargers, CED3423-VB's high current handling capability and low on-resistance ensure reliable power switching and current control.
4. **Consumer electronics**: In consumer electronics products, such as switching power supplies and battery protection circuits, the high efficiency and low on-resistance of this MOSFET can effectively improve the performance of the device and extend battery life.
5. **Communication equipment**: In the power module of communication equipment, the efficient switching performance and stable current handling capability of CED3423-VB ensure the reliability and efficiency of communication equipment.
**CED3423-VB** provides efficient and stable switching performance through its high current carrying capacity, low on-resistance and moderate drain-source voltage, and is widely used in power management, load switching, automotive electronics, consumer electronics and communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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