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CED3055LA-VB Product details
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CED3055LA-VB MOSFET Product Introduction
**Model**: CED3055LA-VB
**Package**: TO252
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 30V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 1.7V
**On-resistance (RDS(ON)）**:
- 9mΩ@VGS=4.5V
- 7mΩ@VGS=10V
**Maximum drain current (ID)**: 70A
**Technology**: Trench
CED3055LA-VB It is a high current, high efficiency single N-channel power MOSFET designed with Trench technology, with extremely low on-resistance and high voltage resistance. Packaged in TO252, this MOSFET is suitable for various high current, high efficiency power switch and load drive applications, and can provide stable and efficient performance in multiple fields.
**Model**: CED3055LA-VB
**Package**: TO252
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 30V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 1.7V
**On-resistance (RDS(ON)）**:
- 9mΩ@VGS=4.5V
- 7mΩ@VGS=10V
**Maximum drain current (ID)**: 70A
**Technology**: Trench
CED3055LA-VB It is a high current, high efficiency single N-channel power MOSFET designed with Trench technology, with extremely low on-resistance and high voltage resistance. Packaged in TO252, this MOSFET is suitable for various high current, high efficiency power switch and load drive applications, and can provide stable and efficient performance in multiple fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V (typical)
- **On-resistance (RDS(ON))**:
- 9mΩ@VGS=4.5V
- 7mΩ@VGS=10V
- **Maximum drain current (ID)**: 70A
- **Drain-source breakdown voltage (BVDSS)**: 30V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 75W
- **Junction-to-ambient thermal resistance (RθJA)**: 50°C/W
- **Junction-to-case thermal resistance (RθJC)**: 2.5°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V (typical)
- **On-resistance (RDS(ON))**:
- 9mΩ@VGS=4.5V
- 7mΩ@VGS=10V
- **Maximum drain current (ID)**: 70A
- **Drain-source breakdown voltage (BVDSS)**: 30V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 75W
- **Junction-to-ambient thermal resistance (RθJA)**: 50°C/W
- **Junction-to-case thermal resistance (RθJC)**: 2.5°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**: The low on-resistance and high current capability of CED3055LA-VB make it ideal for use in switching power supply designs. It can effectively handle high currents and reduce switching losses, thereby improving the overall efficiency and stability of the system.
2. **DC-DC Converter**: In DC-DC converter applications, CED3055LA-VB provides excellent performance as the main switch or synchronous rectifier. Its low RDS(ON) helps reduce energy loss during the conversion process and improves the efficiency of the system.
3. **Motor Driver**: For motor drive applications, the high current handling capability of CED3055LA-VB makes it suitable for switching control of motors. Its high efficiency can reduce power consumption and heat generation, improving the overall performance of the motor drive system.
4. **LED Drive Circuit**: CED3055LA-VB is suitable for switching control in LED drive circuits. Its low on-resistance helps improve the brightness and energy efficiency of LED lights, ensuring stable light output.
5. **Battery Management System**: In battery management systems, this MOSFET can be used for battery switching and load switching. Its high current capability and low on-resistance help optimize the battery charging and discharging process, improving the efficiency and reliability of the system.
6. **Automotive Electronics**: CED3055LA-VB is also suitable for automotive electronic systems, such as power window controls, seat adjusters, etc. Its stability and high efficiency can improve the performance and reliability of automotive electronic systems.
7. **Communication Equipment**: In communication equipment, CED3055LA-VB can be used for power switching and load driving. Its low RDS(ON) characteristics can reduce signal interference and energy loss, ensuring stable operation of the equipment.
The low on-resistance and high current handling capability of CED3055LA-VB enable it to perform well in applications such as switching power supplies, DC-DC converters, motor drivers, LED drive circuits, battery management systems, automotive electronics, and communication equipment, providing an ideal solution for various high current and high efficiency requirements.
1. **Switching Power Supply (SMPS)**: The low on-resistance and high current capability of CED3055LA-VB make it ideal for use in switching power supply designs. It can effectively handle high currents and reduce switching losses, thereby improving the overall efficiency and stability of the system.
2. **DC-DC Converter**: In DC-DC converter applications, CED3055LA-VB provides excellent performance as the main switch or synchronous rectifier. Its low RDS(ON) helps reduce energy loss during the conversion process and improves the efficiency of the system.
3. **Motor Driver**: For motor drive applications, the high current handling capability of CED3055LA-VB makes it suitable for switching control of motors. Its high efficiency can reduce power consumption and heat generation, improving the overall performance of the motor drive system.
4. **LED Drive Circuit**: CED3055LA-VB is suitable for switching control in LED drive circuits. Its low on-resistance helps improve the brightness and energy efficiency of LED lights, ensuring stable light output.
5. **Battery Management System**: In battery management systems, this MOSFET can be used for battery switching and load switching. Its high current capability and low on-resistance help optimize the battery charging and discharging process, improving the efficiency and reliability of the system.
6. **Automotive Electronics**: CED3055LA-VB is also suitable for automotive electronic systems, such as power window controls, seat adjusters, etc. Its stability and high efficiency can improve the performance and reliability of automotive electronic systems.
7. **Communication Equipment**: In communication equipment, CED3055LA-VB can be used for power switching and load driving. Its low RDS(ON) characteristics can reduce signal interference and energy loss, ensuring stable operation of the equipment.
The low on-resistance and high current handling capability of CED3055LA-VB enable it to perform well in applications such as switching power supplies, DC-DC converters, motor drivers, LED drive circuits, battery management systems, automotive electronics, and communication equipment, providing an ideal solution for various high current and high efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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