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CED3055L3-VB Product details
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Product Introduction
CED3055L3-VB is a high-performance single N-channel power MOSFET with a TO252 package. The device is designed to withstand drain-source voltage (VDS) up to 30V and gate-source voltage (VGS) of ±20V. It uses Trench technology and has excellent low on-resistance and high current carrying capacity. CED3055L3-VB is suitable for high-efficiency switching and power management applications, especially in environments that need to handle high currents and lower resistance.
CED3055L3-VB is a high-performance single N-channel power MOSFET with a TO252 package. The device is designed to withstand drain-source voltage (VDS) up to 30V and gate-source voltage (VGS) of ±20V. It uses Trench technology and has excellent low on-resistance and high current carrying capacity. CED3055L3-VB is suitable for high-efficiency switching and power management applications, especially in environments that need to handle high currents and lower resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology type**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology type**: Trench
Domain and module applications：
Application fields and module examples
The design features of CED3055L3-VB make it excel in the following fields and modules:
1. **High power switching**: Due to its extremely low on-resistance and high current carrying capacity, CED3055L3-VB is suitable for high power switching applications, such as power switching and current management circuits. It can efficiently switch high current loads and improve the overall efficiency of the system.
2. **Power management**: In power management systems, this MOSFET can be used in DC-DC converters and power modules to provide reliable current control and low loss switching to ensure efficient operation and stability of the power system.
3. **Motor drive**: CED3055L3-VB is suitable for motor drive circuits, especially in situations where high current and low on-resistance are required, such as motor controllers and drive modules. This efficient switching capability can significantly improve the performance of motor drive systems.
4. **Power Converter**: In various power converter applications, such as inverters and power adapters, CED3055L3-VB provides low on-resistance and high current carrying capacity, which can effectively handle the current in the power conversion process and ensure the stable operation of the equipment.
5. **Overcurrent Protection**: In overcurrent protection circuits, CED3055L3-VB can be used for current switching and protection functions to prevent current overload from damaging the system. Its high current carrying capacity and low on-resistance make it excellent in such protection applications.
These application examples show the excellent performance of CED3055L3-VB in high-current load switching and power management, making it a key component in multiple fields. Its low on-resistance and high current carrying capacity make it outstanding in applications with high efficiency and high current requirements.
The design features of CED3055L3-VB make it excel in the following fields and modules:
1. **High power switching**: Due to its extremely low on-resistance and high current carrying capacity, CED3055L3-VB is suitable for high power switching applications, such as power switching and current management circuits. It can efficiently switch high current loads and improve the overall efficiency of the system.
2. **Power management**: In power management systems, this MOSFET can be used in DC-DC converters and power modules to provide reliable current control and low loss switching to ensure efficient operation and stability of the power system.
3. **Motor drive**: CED3055L3-VB is suitable for motor drive circuits, especially in situations where high current and low on-resistance are required, such as motor controllers and drive modules. This efficient switching capability can significantly improve the performance of motor drive systems.
4. **Power Converter**: In various power converter applications, such as inverters and power adapters, CED3055L3-VB provides low on-resistance and high current carrying capacity, which can effectively handle the current in the power conversion process and ensure the stable operation of the equipment.
5. **Overcurrent Protection**: In overcurrent protection circuits, CED3055L3-VB can be used for current switching and protection functions to prevent current overload from damaging the system. Its high current carrying capacity and low on-resistance make it excellent in such protection applications.
These application examples show the excellent performance of CED3055L3-VB in high-current load switching and power management, making it a key component in multiple fields. Its low on-resistance and high current carrying capacity make it outstanding in applications with high efficiency and high current requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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