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CED1710-VB Product details
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CED1710-VB MOSFET Product Introduction
CED1710-VB is a high-performance N-channel MOSFET with TO251 package type, designed for medium voltage and medium current applications. This MOSFET supports a maximum drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 1.8V. At VGS = 10V, the on-resistance (RDS(ON)) is 110mΩ and the maximum drain current (ID) is 15A. Using Trench technology, this MOSFET is suitable for a variety of applications requiring high switching efficiency and reliability.
CED1710-VB is a high-performance N-channel MOSFET with TO251 package type, designed for medium voltage and medium current applications. This MOSFET supports a maximum drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 1.8V. At VGS = 10V, the on-resistance (RDS(ON)) is 110mΩ and the maximum drain current (ID) is 15A. Using Trench technology, this MOSFET is suitable for a variety of applications requiring high switching efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | 110mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package**: TO251
- **Description**: The TO251 package is a surface mount package suitable for medium and high power applications. The package provides good heat dissipation and mechanical strength, which helps the MOSFET to operate stably under high load conditions.
2. **Configuration**: Single N-channel
- **Description**: The CED1710-VB is a single N-channel MOSFET suitable for circuits that require efficient switching and control. This configuration enables it to be stably turned on and off in a high voltage environment.
3. **VDS (Drain-Source Voltage)**: 100V
- **Description**: The maximum drain-source voltage is 100V, allowing the MOSFET to operate stably in a relatively high voltage environment, suitable for medium voltage applications.
4. **VGS (gate-source voltage)**: ±20V
- **Description**: The supported gate-source voltage range is ±20V, providing greater flexibility for different drive voltage requirements.
5. **Vth (threshold voltage)**: 1.8V
- **Description**: The threshold voltage of the MOSFET is 1.8V, which means that the MOSFET just starts to turn on at this voltage. The lower threshold voltage allows it to turn on quickly even at low gate voltages.
6. **RDS(ON) (on-resistance)**: 110mΩ @ VGS = 10V
- **Description**: The on-resistance is 110mΩ when the gate voltage is 10V. The lower on-resistance helps reduce power consumption and improve efficiency, and is suitable for medium current applications.
7. **ID (Continuous Drain Current)**: 15A
- **Description**: Under specified operating conditions, the maximum continuous drain current that the MOSFET can handle is 15A, which is suitable for medium current application requirements.
8. **Technology**: Trench
- **Description**: MOSFETs using Trench technology provide lower on-resistance and higher switching speed, which are suitable for efficient current switching and control applications.
1. **Package**: TO251
- **Description**: The TO251 package is a surface mount package suitable for medium and high power applications. The package provides good heat dissipation and mechanical strength, which helps the MOSFET to operate stably under high load conditions.
2. **Configuration**: Single N-channel
- **Description**: The CED1710-VB is a single N-channel MOSFET suitable for circuits that require efficient switching and control. This configuration enables it to be stably turned on and off in a high voltage environment.
3. **VDS (Drain-Source Voltage)**: 100V
- **Description**: The maximum drain-source voltage is 100V, allowing the MOSFET to operate stably in a relatively high voltage environment, suitable for medium voltage applications.
4. **VGS (gate-source voltage)**: ±20V
- **Description**: The supported gate-source voltage range is ±20V, providing greater flexibility for different drive voltage requirements.
5. **Vth (threshold voltage)**: 1.8V
- **Description**: The threshold voltage of the MOSFET is 1.8V, which means that the MOSFET just starts to turn on at this voltage. The lower threshold voltage allows it to turn on quickly even at low gate voltages.
6. **RDS(ON) (on-resistance)**: 110mΩ @ VGS = 10V
- **Description**: The on-resistance is 110mΩ when the gate voltage is 10V. The lower on-resistance helps reduce power consumption and improve efficiency, and is suitable for medium current applications.
7. **ID (Continuous Drain Current)**: 15A
- **Description**: Under specified operating conditions, the maximum continuous drain current that the MOSFET can handle is 15A, which is suitable for medium current application requirements.
8. **Technology**: Trench
- **Description**: MOSFETs using Trench technology provide lower on-resistance and higher switching speed, which are suitable for efficient current switching and control applications.
Domain and module applications：
Application Examples
1. **Power Management**:
- CED1710-VB can effectively control the current flow in power management systems, such as DC-DC converters and power modules. Its low on-resistance and high current handling capability make it suitable for high-efficiency power regulation and conversion.
2. **Switching Power Supply**:
- In switching power supply design, CED1710-VB can be used as an efficient switching element to support high switching frequency applications. Its low RDS(ON) and good heat dissipation performance ensure reliability and efficiency in high power switching operations.
3. **LED Drive**:
- In LED drive circuits, CED1710-VB can be used to control the drive of high current LEDs. Its high current handling capability and low on-resistance help achieve stable LED light emission and improve drive efficiency.
4. **Industrial Control**:
- In industrial control systems, CED1710-VB can be used for motor control and other high current switching applications. Its high current capability and reliability make it suitable for current control and switching tasks in various industrial automation equipment.
5. **Automotive Electronics**:
- In automotive electronic systems, such as battery management systems and electric drive control, CED1710-VB's medium voltage and high current capabilities support stable power switching and current control, meeting the reliability and performance requirements in automotive applications.
CED1710-VB MOSFET's Trench technology, high switching efficiency and medium current handling capability make it widely used in power management, switching power supplies, LED drivers, industrial control and automotive electronics.
1. **Power Management**:
- CED1710-VB can effectively control the current flow in power management systems, such as DC-DC converters and power modules. Its low on-resistance and high current handling capability make it suitable for high-efficiency power regulation and conversion.
2. **Switching Power Supply**:
- In switching power supply design, CED1710-VB can be used as an efficient switching element to support high switching frequency applications. Its low RDS(ON) and good heat dissipation performance ensure reliability and efficiency in high power switching operations.
3. **LED Drive**:
- In LED drive circuits, CED1710-VB can be used to control the drive of high current LEDs. Its high current handling capability and low on-resistance help achieve stable LED light emission and improve drive efficiency.
4. **Industrial Control**:
- In industrial control systems, CED1710-VB can be used for motor control and other high current switching applications. Its high current capability and reliability make it suitable for current control and switching tasks in various industrial automation equipment.
5. **Automotive Electronics**:
- In automotive electronic systems, such as battery management systems and electric drive control, CED1710-VB's medium voltage and high current capabilities support stable power switching and current control, meeting the reliability and performance requirements in automotive applications.
CED1710-VB MOSFET's Trench technology, high switching efficiency and medium current handling capability make it widely used in power management, switching power supplies, LED drivers, industrial control and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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