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CED13N07-VB Product details
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CED13N07-VB MOSFET Product Introduction
**Model**: CED13N07-VB
**Package**: TO252
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 60V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 1.7V
**On-resistance (RDS(ON)）**:
- 85mΩ@VGS=4.5V
- 73mΩ@VGS=10V
**Maximum drain current (ID)**: 18A
**Technology**: Trench
CED13N07-VB is a single N-channel power MOSFET that uses Trench technology with lower on-resistance and higher withstand voltage characteristics. Packaged in TO252, it is suitable for a variety of applications that require medium voltage and high current handling. This MOSFET is particularly suitable for use in power management and switching applications that require low conduction losses and high efficiency.
**Model**: CED13N07-VB
**Package**: TO252
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 60V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 1.7V
**On-resistance (RDS(ON)）**:
- 85mΩ@VGS=4.5V
- 73mΩ@VGS=10V
**Maximum drain current (ID)**: 18A
**Technology**: Trench
CED13N07-VB is a single N-channel power MOSFET that uses Trench technology with lower on-resistance and higher withstand voltage characteristics. Packaged in TO252, it is suitable for a variety of applications that require medium voltage and high current handling. This MOSFET is particularly suitable for use in power management and switching applications that require low conduction losses and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V (typical)
- **On-resistance (RDS(ON))**:
- 85mΩ@VGS=4.5V
- 73mΩ@VGS=10V
- **Maximum drain current (ID)**: 18A
- **Drain-source breakdown voltage (BVDSS)**: 60V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 50W
- **Junction-to-ambient thermal resistance (RθJA)**: 62°C/W
- **Junction-to-case thermal resistance (RθJC)**: 2.5°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V (typical)
- **On-resistance (RDS(ON))**:
- 85mΩ@VGS=4.5V
- 73mΩ@VGS=10V
- **Maximum drain current (ID)**: 18A
- **Drain-source breakdown voltage (BVDSS)**: 60V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 50W
- **Junction-to-ambient thermal resistance (RθJA)**: 62°C/W
- **Junction-to-case thermal resistance (RθJC)**: 2.5°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**: CED13N07-VB is well suited for switching power supply design due to its low on-resistance and high current handling capability. It is able to provide stable performance in high-efficiency switching operations, reduce energy losses, and improve overall system efficiency.
2. **DC-DC Converter**: In a DC-DC converter, CED13N07-VB can be used as a main switch or synchronous rectifier. Its low on-resistance helps reduce switching losses, increase conversion efficiency, and improve thermal management of the system.
3. **Motor Drive**: In motor drive applications, CED13N07-VB's high current carrying capability makes it an ideal choice. It is able to handle high currents during motor startup and operation while keeping power consumption and heat generation low.
4. **LED driver circuit**: CED13N07-VB is suitable for switch control in LED driver circuits. Its low on-resistance can effectively reduce power consumption and improve the brightness and energy efficiency of LED lights.
5. **Battery management system**: In battery management systems, CED13N07-VB can be used for battery switching and power management. Its high current handling capability and low on-resistance help optimize the battery charging and discharging process and improve the overall reliability of the system.
6. **Automotive electronics**: The voltage and current characteristics of CED13N07-VB make it suitable for automotive electronic systems, such as power window control, seat adjusters and other modules that require efficient switch control.
7. **Communication equipment**: In communication equipment, CED13N07-VB can be used for power switching and load switching. Its low on-resistance characteristics ensure efficient power management and reduce signal interference and energy loss.
CED13N07-VB is a medium voltage and high current handling N-channel MOSFET suitable for multiple fields such as switching power supplies, DC-DC converters, motor drivers, LED drive circuits, battery management systems, automotive electronics and communication equipment. Its excellent performance enables it to perform well in these applications.
1. **Switching Power Supply (SMPS)**: CED13N07-VB is well suited for switching power supply design due to its low on-resistance and high current handling capability. It is able to provide stable performance in high-efficiency switching operations, reduce energy losses, and improve overall system efficiency.
2. **DC-DC Converter**: In a DC-DC converter, CED13N07-VB can be used as a main switch or synchronous rectifier. Its low on-resistance helps reduce switching losses, increase conversion efficiency, and improve thermal management of the system.
3. **Motor Drive**: In motor drive applications, CED13N07-VB's high current carrying capability makes it an ideal choice. It is able to handle high currents during motor startup and operation while keeping power consumption and heat generation low.
4. **LED driver circuit**: CED13N07-VB is suitable for switch control in LED driver circuits. Its low on-resistance can effectively reduce power consumption and improve the brightness and energy efficiency of LED lights.
5. **Battery management system**: In battery management systems, CED13N07-VB can be used for battery switching and power management. Its high current handling capability and low on-resistance help optimize the battery charging and discharging process and improve the overall reliability of the system.
6. **Automotive electronics**: The voltage and current characteristics of CED13N07-VB make it suitable for automotive electronic systems, such as power window control, seat adjusters and other modules that require efficient switch control.
7. **Communication equipment**: In communication equipment, CED13N07-VB can be used for power switching and load switching. Its low on-resistance characteristics ensure efficient power management and reduce signal interference and energy loss.
CED13N07-VB is a medium voltage and high current handling N-channel MOSFET suitable for multiple fields such as switching power supplies, DC-DC converters, motor drivers, LED drive circuits, battery management systems, automotive electronics and communication equipment. Its excellent performance enables it to perform well in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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