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CED07N65A-VB Product details
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CED07N65A-VB MOSFET Product Introduction
CED07N65A-VB is a high voltage N-channel MOSFET in TO252 package type, designed for high voltage applications. Its main features include a maximum drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) range of ±30V, and a threshold voltage (Vth) of 3.5V. At VGS = 10V, the on-resistance (RDS(ON)) is 1000mΩ and the maximum drain current (ID) is 5A. This MOSFET uses SJ_Multi-EPI technology, providing excellent current handling capability and reliability, and is very suitable for high voltage and medium and low current applications.
CED07N65A-VB is a high voltage N-channel MOSFET in TO252 package type, designed for high voltage applications. Its main features include a maximum drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) range of ±30V, and a threshold voltage (Vth) of 3.5V. At VGS = 10V, the on-resistance (RDS(ON)) is 1000mΩ and the maximum drain current (ID) is 5A. This MOSFET uses SJ_Multi-EPI technology, providing excellent current handling capability and reliability, and is very suitable for high voltage and medium and low current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package**: TO252
- **Description**: The TO252 package is a compact surface mount package with good heat dissipation and mechanical strength, suitable for medium power applications.
2. **Configuration**: Single N-channel
- **Description**: The CED07N65A-VB is a single N-channel MOSFET suitable for circuits requiring high voltage control, providing efficient switching and regulation functions.
3. **VDS (Drain-Source Voltage)**: 650V
- **Description**: The maximum drain-source voltage allows the MOSFET to operate stably in a high voltage environment, suitable for high voltage applications.
4. **VGS (Gate-Source Voltage)**: ±30V
- **Description**: Supports a maximum voltage range between the gate and the source, providing flexible control voltage settings.
5. **Vth (Threshold Voltage)**: 3.5V
- **Description**: The minimum gate voltage that turns on the MOSFET. A higher threshold voltage helps to stabilize the conduction at high voltages.
6. **RDS(ON) (On-Resistance)**: 1000mΩ @ VGS = 10V
- **Description**: The on-resistance at a gate voltage of 10V affects the conduction loss and power efficiency of the MOSFET. A higher on-resistance is suitable for low current and high voltage applications.
7. **ID (Continuous Drain Current)**: 5A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions, suitable for applications with medium current requirements.
8. **Technology**: SJ_Multi-EPI
- **Description**: SJ_Multi-EPI technology provides higher current handling capability and lower on-resistance for high performance high voltage applications.
1. **Package**: TO252
- **Description**: The TO252 package is a compact surface mount package with good heat dissipation and mechanical strength, suitable for medium power applications.
2. **Configuration**: Single N-channel
- **Description**: The CED07N65A-VB is a single N-channel MOSFET suitable for circuits requiring high voltage control, providing efficient switching and regulation functions.
3. **VDS (Drain-Source Voltage)**: 650V
- **Description**: The maximum drain-source voltage allows the MOSFET to operate stably in a high voltage environment, suitable for high voltage applications.
4. **VGS (Gate-Source Voltage)**: ±30V
- **Description**: Supports a maximum voltage range between the gate and the source, providing flexible control voltage settings.
5. **Vth (Threshold Voltage)**: 3.5V
- **Description**: The minimum gate voltage that turns on the MOSFET. A higher threshold voltage helps to stabilize the conduction at high voltages.
6. **RDS(ON) (On-Resistance)**: 1000mΩ @ VGS = 10V
- **Description**: The on-resistance at a gate voltage of 10V affects the conduction loss and power efficiency of the MOSFET. A higher on-resistance is suitable for low current and high voltage applications.
7. **ID (Continuous Drain Current)**: 5A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions, suitable for applications with medium current requirements.
8. **Technology**: SJ_Multi-EPI
- **Description**: SJ_Multi-EPI technology provides higher current handling capability and lower on-resistance for high performance high voltage applications.
Domain and module applications：
Application examples
1. **High-voltage switch**:
- CED07N65A-VB is suitable for high-voltage switch applications, such as high-voltage DC power switch and high-voltage load switch. Its high voltage withstand capability ensures reliable switching performance in high voltage environment, suitable for switch scenarios requiring high withstand voltage.
2. **Power management**:
- In high-voltage power management systems, CED07N65A-VB can be used for DC-DC converters and power modules. Its high voltage withstand capability and stable performance support the effective control and management of the power system, ensuring the stability and safety of the power output.
3. **Lighting equipment**:
- In high-voltage lighting equipment, such as LED drive circuits and high-voltage lamp drive circuits, CED07N65A-VB's high voltage handling capability and medium current handling capability support efficient driving and stable operation of lighting equipment.
4. **Industrial Control**:
- In industrial automation and control systems, CED07N65A-VB can be used for high voltage control applications such as high voltage motor control and high voltage load switching. Its high voltage withstand capability and reliability make it suitable for control applications in various industrial equipment.
5. **Power Amplifier**:
- In power amplifier applications, especially in high voltage signal amplifiers, CED07N65A-VB's high voltage handling capability and reliability make it an ideal choice. Its stable high voltage performance ensures stable operation of power amplifiers in high voltage environments.
The high voltage capability, stable performance and SJ_Multi-EPI technology of CED07N65A-VB MOSFET make it widely used in high voltage switching, power management, lighting equipment, industrial control and power amplifiers.
1. **High-voltage switch**:
- CED07N65A-VB is suitable for high-voltage switch applications, such as high-voltage DC power switch and high-voltage load switch. Its high voltage withstand capability ensures reliable switching performance in high voltage environment, suitable for switch scenarios requiring high withstand voltage.
2. **Power management**:
- In high-voltage power management systems, CED07N65A-VB can be used for DC-DC converters and power modules. Its high voltage withstand capability and stable performance support the effective control and management of the power system, ensuring the stability and safety of the power output.
3. **Lighting equipment**:
- In high-voltage lighting equipment, such as LED drive circuits and high-voltage lamp drive circuits, CED07N65A-VB's high voltage handling capability and medium current handling capability support efficient driving and stable operation of lighting equipment.
4. **Industrial Control**:
- In industrial automation and control systems, CED07N65A-VB can be used for high voltage control applications such as high voltage motor control and high voltage load switching. Its high voltage withstand capability and reliability make it suitable for control applications in various industrial equipment.
5. **Power Amplifier**:
- In power amplifier applications, especially in high voltage signal amplifiers, CED07N65A-VB's high voltage handling capability and reliability make it an ideal choice. Its stable high voltage performance ensures stable operation of power amplifiers in high voltage environments.
The high voltage capability, stable performance and SJ_Multi-EPI technology of CED07N65A-VB MOSFET make it widely used in high voltage switching, power management, lighting equipment, industrial control and power amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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