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CED06N7-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**CED06N7-VB** is a high voltage N-channel MOSFET in TO252 package. The device adopts super junction multi-epitaxial (SJ_Multi-EPI) technology, which can withstand drain-source voltage up to 700V and is suitable for high voltage application scenarios. Its maximum on-resistance is 1000mΩ (VGS=10V), and the maximum drain current is 5A. It has the characteristics of high voltage control and high efficiency, which is very suitable for use in applications that require high voltage stability.
**CED06N7-VB** is a high voltage N-channel MOSFET in TO252 package. The device adopts super junction multi-epitaxial (SJ_Multi-EPI) technology, which can withstand drain-source voltage up to 700V and is suitable for high voltage application scenarios. Its maximum on-resistance is 1000mΩ (VGS=10V), and the maximum drain current is 5A. It has the characteristics of high voltage control and high efficiency, which is very suitable for use in applications that require high voltage stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
- **Model**: CED06N7-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
- **Drain current (ID)**: 5A
- **Technology**: Superjunction multi-epitaxial (SJ_Multi-EPI)
- **Model**: CED06N7-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
- **Drain current (ID)**: 5A
- **Technology**: Superjunction multi-epitaxial (SJ_Multi-EPI)
Domain and module applications：
3. Applicable fields and modules
**CED06N7-VB**'s characteristics make it widely used in the following fields and modules:
1. **High-voltage power conversion**: The 700V high withstand voltage characteristics of this MOSFET make it very suitable for high-voltage power conversion fields, such as AC-DC and DC-DC converters. These applications require high-voltage switching elements to achieve efficient power conversion, and the low on-resistance of CED06N7-VB helps improve conversion efficiency.
2. **Industrial electrical equipment**: In industrial automation equipment and electrical equipment, this MOSFET is able to handle high voltages and provide reliable switching performance, making it very suitable for industrial control and drive circuits, such as motor drives and industrial power modules.
3. **Electric vehicles and renewable energy**: In electric vehicle charging stations and renewable energy systems, CED06N7-VB can be used in inverters and power electronic conversion equipment to process high-voltage power input from solar or wind energy and convert it into usable power.
4. **Home appliances and consumer electronics**: The device can also be used in high-voltage home appliances and consumer electronics products, such as high-voltage power modules and power adapters, to provide stable high-voltage switching operations for these devices.
5. **Grid and power management systems**: In grid systems and power management, CED06N7-VB can be used to switch and regulate high-voltage currents, providing a stable control method for power distribution and management.
**CED06N7-VB**'s design makes it particularly suitable for applications that require high voltage handling and stability, providing reliable switching performance and high efficiency.
**CED06N7-VB**'s characteristics make it widely used in the following fields and modules:
1. **High-voltage power conversion**: The 700V high withstand voltage characteristics of this MOSFET make it very suitable for high-voltage power conversion fields, such as AC-DC and DC-DC converters. These applications require high-voltage switching elements to achieve efficient power conversion, and the low on-resistance of CED06N7-VB helps improve conversion efficiency.
2. **Industrial electrical equipment**: In industrial automation equipment and electrical equipment, this MOSFET is able to handle high voltages and provide reliable switching performance, making it very suitable for industrial control and drive circuits, such as motor drives and industrial power modules.
3. **Electric vehicles and renewable energy**: In electric vehicle charging stations and renewable energy systems, CED06N7-VB can be used in inverters and power electronic conversion equipment to process high-voltage power input from solar or wind energy and convert it into usable power.
4. **Home appliances and consumer electronics**: The device can also be used in high-voltage home appliances and consumer electronics products, such as high-voltage power modules and power adapters, to provide stable high-voltage switching operations for these devices.
5. **Grid and power management systems**: In grid systems and power management, CED06N7-VB can be used to switch and regulate high-voltage currents, providing a stable control method for power distribution and management.
**CED06N7-VB**'s design makes it particularly suitable for applications that require high voltage handling and stability, providing reliable switching performance and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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