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CED05P03-VB Product details

Product introduction:

Product Introduction



**CED05P03-VB** is a single-channel P-channel MOSFET in TO251 package using Trench technology. This MOSFET is designed for low-voltage, high-current applications. It has a drain-source voltage (VDS) capability of up to -30V and can operate stably in a negative voltage environment. Its maximum gate-source voltage (VGS) is ±20V and its gate threshold voltage (Vth) is -1.7V. When the gate-source voltage is 4.5V, the on-resistance (RDS(ON)) is 72mΩ, and when the gate-source voltage is 10V, the on-resistance drops to 56mΩ. The maximum drain current (ID) of this MOSFET is -20A, which is suitable for low-voltage applications that require high current handling.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-P -30V -1.7V -20A 56mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-P -30V -1.7V -20A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-P -30V -1.7V -20A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-P
Detailed parameter description



- **Model**: CED05P03-VB

- **Package**: TO251

- **Configuration**: Single channel P-channel

- **Maximum drain-source voltage (VDS)**: -30V

- **Maximum gate-source voltage (VGS)**: ±20V

- **Gate threshold voltage (Vth)**: -1.7V

- **On-resistance (RDS(ON))**:

- 72mΩ @ VGS=4.5V

- 56mΩ @ VGS=10V

- **Maximum drain current (ID)**: -20A

- **Technology**: Trench



Domain and module applications:

Applications and modules



**CED05P03-VB** MOSFET has a wide range of applications in multiple fields and modules, especially in low voltage, high current environments, the specific applications are as follows:



1. **Power management**:

- In power management systems, CED05P03-VB can be used as a switching element for voltage regulation and load switching.

- Its negative voltage handling capability (-30V) and low on-resistance make it suitable for battery management systems, low voltage power switches and DC-DC converters to improve power efficiency and stability.



2. **Load switch**:

- In low voltage load switch circuits, this MOSFET can be used as a switching element to control current and manage the on and off of high current loads.

- Suitable for power control in portable devices and consumer electronics, such as power management modules for laptops, mobile phones and tablets.



3. **Inverters and converters**:

- In inverters and power converters, CED05P03-VB is suitable for switching elements in low voltage DC-AC inverters and DC-DC converters.

- Its low on-resistance and high current handling capability help improve the efficiency of inverters and converters, and are suitable for solar systems and uninterruptible power supplies (UPS).



4. **Automotive electronics**:

- In automotive electronic systems, this MOSFET can be used for low voltage power switching and current control to ensure stable operation of onboard electronic devices.

- Suitable for automotive battery management, on-board chargers, and power control modules in electric vehicles, providing efficient power management and load control.



5. **Industrial control**:

- In industrial control systems, CED05P03-VB is suitable for low voltage control and protection circuits, such as power switching and current regulation in industrial equipment.

- Its low on-resistance and high current capability enable it to provide reliable switching and current control functions in industrial control modules, improving the stability and efficiency of equipment.



These application examples show the importance of CED05P03-VB MOSFET in low voltage and high current applications, which can effectively meet the switching control and current management needs in different fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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