CED04N7G-VB Product details
Product introduction:
CED04N7G-VB is a high voltage N-channel MOSFET in TO251 package, produced by Nexperia. This MOSFET uses SJ_Multi-EPI technology and is designed for high voltage applications, capable of stable operation at drain-source voltages up to 700V. Its high voltage withstand capability and high on-resistance make it ideal for use in a variety of applications requiring high voltage switching and control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | 2400mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
| Parameter| Value|
|--------------------|---------------------------------|
| Package| TO251 |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 700V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 2400mΩ @ VGS=10V |
| Maximum drain current (ID) | 2A |
| Technology| SJ_Multi-EPI |
Domain and module applications:
CED04N7G-VB MOSFET is suitable for the following areas and modules:
1. **High voltage switch**:
- **Power switch**: In high voltage power switch systems, CED04N7G-VB is able to handle voltages up to 700V, making it ideal for high voltage power switching and control circuits. Its high on-resistance ensures efficient voltage switching with low current requirements.
- **High voltage protection circuit**: This MOSFET performs well in high voltage protection circuits, being able to withstand high voltages and provide the necessary switching functions to protect the circuit from damage due to overvoltage.
2. **Power management**:
- **Power converter**: In high voltage power converters, CED04N7G-VB's high drain-source voltage and higher on-resistance enable it to provide stable switching performance during power conversion, making it suitable for high voltage power conversion modules.
- **Power Regulation Module**: In power management applications that require high voltage regulation, this MOSFET can effectively handle high voltages and provide reliable switching control, suitable for power regulation and control modules.
3. **Industrial Control**:
- **High Voltage Drive**: In industrial control systems, CED04N7G-VB can handle high voltage drive requirements and is suitable for control systems that require high voltage switches, such as high voltage drive circuits and control modules.
- **Load Switch**: Used in industrial load switch applications, this MOSFET can handle high voltage loads and is suitable for applications that require high voltage and power control.
4. **Electrical Equipment**:
- **Household Electrical Equipment**: In some household electrical equipment that requires high voltage processing, CED04N7G-VB can provide stable high voltage switching performance and is suitable for power management of power tools and home appliances.
- **Power Protection System**: In household and industrial power protection systems, this MOSFET can withstand high voltages and provide effective protection functions for the power system.
CED04N7G-VB MOSFET performs well in high voltage applications and is suitable for a variety of electronic devices and systems that require high voltage resistance.
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