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CED03N8-VB Product details
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CED03N8-VB MOSFET Product Introduction
**Model**: CED03N8-VB
**Package**: TO252
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 800V
**Maximum gate-source voltage (VGS)**: ±30V
**Threshold voltage (Vth)**: 3.5V
**On-resistance (RDS(ON)）**: 2600mΩ@VGS=10V
**Maximum drain current (ID)**: 2A
**Technology**: SJ_Multi-EPI
CED03N8-VB is a high voltage N-channel power MOSFET that adopts Super Junction (SJ) Multi-EPI technology with high withstand voltage and low on-resistance characteristics. Its package is TO252, which is suitable for various applications that require high voltage and high efficiency. Although the on-resistance is high, its high withstand voltage of 800V makes it perform well in specific high-voltage application scenarios.
**Model**: CED03N8-VB
**Package**: TO252
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 800V
**Maximum gate-source voltage (VGS)**: ±30V
**Threshold voltage (Vth)**: 3.5V
**On-resistance (RDS(ON)）**: 2600mΩ@VGS=10V
**Maximum drain current (ID)**: 2A
**Technology**: SJ_Multi-EPI
CED03N8-VB is a high voltage N-channel power MOSFET that adopts Super Junction (SJ) Multi-EPI technology with high withstand voltage and low on-resistance characteristics. Its package is TO252, which is suitable for various applications that require high voltage and high efficiency. Although the on-resistance is high, its high withstand voltage of 800V makes it perform well in specific high-voltage application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V (typical)
- **On-resistance (RDS(ON))**:
- 2600mΩ@VGS=10V
- **Maximum drain current (ID)**: 2A
- **Drain-source breakdown voltage (BVDSS)**: 800V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±30V
- **Power dissipation (Ptot)**: 50W
- **Junction-to-ambient thermal resistance (RθJA)**: 62°C/W
- **Junction-to-Case Thermal Resistance (RθJC)**: 2.5°C/W
- **Operating Junction Temperature Range**: -55°C to +150°C
- **Storage Temperature Range**: -55°C to +150°C
- **Technology**: SJ_Multi-EPI
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V (typical)
- **On-resistance (RDS(ON))**:
- 2600mΩ@VGS=10V
- **Maximum drain current (ID)**: 2A
- **Drain-source breakdown voltage (BVDSS)**: 800V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±30V
- **Power dissipation (Ptot)**: 50W
- **Junction-to-ambient thermal resistance (RθJA)**: 62°C/W
- **Junction-to-Case Thermal Resistance (RθJC)**: 2.5°C/W
- **Operating Junction Temperature Range**: -55°C to +150°C
- **Storage Temperature Range**: -55°C to +150°C
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power conversion**: The CED03N8-VB’s high drain-source voltage of 800V makes it ideal for high-voltage power conversion applications. These applications include DC-DC converters and AC-DC converters, where its high withstand voltage characteristics ensure safe and stable operation under high voltage conditions.
2. **Lighting systems**: In LED lighting systems, high-voltage MOSFETs are used to drive LED lamps. The high withstand voltage and low on-resistance characteristics of the CED03N8-VB can improve power efficiency and ensure long-term stable operation of LED lamps.
3. **Industrial power**: Due to its high voltage withstand capability, the CED03N8-VB is suitable for industrial power systems, especially those applications that need to handle high voltage and high power. This includes industrial-grade power supplies and motor drive systems.
4. **Uninterruptible power supply (UPS)**: In UPS systems, high-voltage MOSFETs are used for power switching and battery management. The high withstand voltage characteristics of CED03N8-VB can ensure fast switching to battery power when power is interrupted and maintain stable performance under high voltage.
5. **Inverter**: CED03N8-VB is suitable for various types of inverter applications, such as solar inverters and wind inverters. Its high voltage and low on-resistance enable it to efficiently convert and manage electrical energy.
6. **Electric Vehicle Charger**: In electric vehicle chargers, high-voltage MOSFETs are used for power management and energy conversion. The high voltage characteristics and low on-resistance of CED03N8-VB enable it to efficiently handle the high voltage requirements during charging.
7. **Power Management Module**: In power modules that require high voltage management, CED03N8-VB can be used to protect and control the input and output of the power supply to ensure the safety and stability of the system.
As a high-voltage N-channel MOSFET, CED03N8-VB is suitable for high-voltage power conversion, lighting systems, industrial power supplies, uninterruptible power supplies, inverters, electric vehicle chargers, power management modules, etc. Its high voltage tolerance and stable performance make it perform well in these applications.
1. **High-voltage power conversion**: The CED03N8-VB’s high drain-source voltage of 800V makes it ideal for high-voltage power conversion applications. These applications include DC-DC converters and AC-DC converters, where its high withstand voltage characteristics ensure safe and stable operation under high voltage conditions.
2. **Lighting systems**: In LED lighting systems, high-voltage MOSFETs are used to drive LED lamps. The high withstand voltage and low on-resistance characteristics of the CED03N8-VB can improve power efficiency and ensure long-term stable operation of LED lamps.
3. **Industrial power**: Due to its high voltage withstand capability, the CED03N8-VB is suitable for industrial power systems, especially those applications that need to handle high voltage and high power. This includes industrial-grade power supplies and motor drive systems.
4. **Uninterruptible power supply (UPS)**: In UPS systems, high-voltage MOSFETs are used for power switching and battery management. The high withstand voltage characteristics of CED03N8-VB can ensure fast switching to battery power when power is interrupted and maintain stable performance under high voltage.
5. **Inverter**: CED03N8-VB is suitable for various types of inverter applications, such as solar inverters and wind inverters. Its high voltage and low on-resistance enable it to efficiently convert and manage electrical energy.
6. **Electric Vehicle Charger**: In electric vehicle chargers, high-voltage MOSFETs are used for power management and energy conversion. The high voltage characteristics and low on-resistance of CED03N8-VB enable it to efficiently handle the high voltage requirements during charging.
7. **Power Management Module**: In power modules that require high voltage management, CED03N8-VB can be used to protect and control the input and output of the power supply to ensure the safety and stability of the system.
As a high-voltage N-channel MOSFET, CED03N8-VB is suitable for high-voltage power conversion, lighting systems, industrial power supplies, uninterruptible power supplies, inverters, electric vehicle chargers, power management modules, etc. Its high voltage tolerance and stable performance make it perform well in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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