CED02N9-VB Product details
Product introduction:
CED02N9-VB is a high voltage single N-channel power MOSFET in TO252 package type. The device has a drain-source voltage (VDS) of up to 900V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. It uses SJ_Multi-EPI technology to provide high voltage tolerance and reliability for high voltage applications. Although the on-resistance is high, its design ensures stability and safety under high voltage conditions, which is particularly suitable for power conversion and protection circuits.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 2A | 2700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2700mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology type**: SJ_Multi-EPI
Domain and module applications:
The high voltage tolerance and stable performance of CED02N9-VB make it excel in the following fields and modules:
1. **High voltage power conversion**: CED02N9-VB can handle drain-source voltage up to 900V, suitable for high voltage power converters and switch mode power supplies (SMPS), ensuring high efficiency and stability under high voltage conditions.
2. **Power protection circuit**: In the power protection circuit, this MOSFET can be used for overvoltage protection and surge protection, protecting the system from damage caused by overvoltage and current surge, and improving the safety and reliability of the system.
3. **Industrial power system**: In the industrial power system, CED02N9-VB can operate in a high voltage environment, suitable for high voltage switches and protection circuits of industrial equipment, ensuring the stable operation of the equipment.
4. **Power Converters and Inverters**: The device performs well in power converter and inverter circuits and is suitable for applications such as solar inverters and high-voltage DC converters that require high voltage processing.
5. **Battery Management System**: In battery management systems, CED02N9-VB can be used in battery protection circuits to prevent high voltage from damaging the battery and ensure the safety and reliability of the system. It is particularly suitable for use in high-voltage battery packs and energy storage systems.
These application examples demonstrate the reliable performance of CED02N9-VB in high-voltage environments, making it a key component in high-voltage power systems and protection circuits. Its high voltage tolerance and reliability make it indispensable in multiple high-voltage applications.
Technical support:
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