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CED02N6G-VB Product details
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CED02N6G-VB MOSFET Product Introduction
CED02N6G-VB is a high voltage N-channel MOSFET in TO251 package type, designed for applications in high voltage environments. It has a maximum drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) range of ±30V. The on-resistance (RDS(ON)) of this MOSFET is 4300mΩ at VGS = 10V and the maximum drain current (ID) is 2A. Using Plannar technology, CED02N6G-VB provides reliable high voltage performance and is suitable for high voltage switching and power management applications.
CED02N6G-VB is a high voltage N-channel MOSFET in TO251 package type, designed for applications in high voltage environments. It has a maximum drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) range of ±30V. The on-resistance (RDS(ON)) of this MOSFET is 4300mΩ at VGS = 10V and the maximum drain current (ID) is 2A. Using Plannar technology, CED02N6G-VB provides reliable high voltage performance and is suitable for high voltage switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package**: TO251
- **Description**: The TO251 package is a surface mount package that provides good heat dissipation and stable mechanical strength, suitable for medium power applications. Its package design makes the MOSFET perform well in heat dissipation, which helps to extend the service life of the component.
2. **Configuration**: Single N-channel
- **Description**: CED02N6G-VB is a single N-channel MOSFET suitable for positive current controlled circuits, providing efficient switching and regulation functions.
3. **VDS (Drain-Source Voltage)**: 650V
- **Description**: The maximum drain-source voltage allows the MOSFET to work stably in a high voltage environment, suitable for high voltage applications.
4. **VGS (gate-source voltage)**: ±30V
- **Description**: Supports the maximum voltage range between gate and source, providing flexible control voltage setting.
5. **Vth (threshold voltage)**: 3.5V
- **Description**: The minimum gate voltage that turns on the MOSFET. The relatively high threshold voltage helps to stabilize the conduction at high voltage.
6. **RDS(ON) (on-resistance)**: 4300mΩ @ VGS = 10V
- **Description**: The on-resistance at a gate voltage of 10V affects the conduction loss and power efficiency of the MOSFET. Higher on-resistance increases switching losses, but still provides adequate performance in certain high-voltage applications.
7. **ID (Continuous Drain Current)**: 2A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions, suitable for applications with medium current requirements.
8. **Technology**: Plannar
- **Description**: Plannar technology is a mature MOSFET manufacturing process that is suitable for high voltage applications and provides stable performance and reliability.
1. **Package**: TO251
- **Description**: The TO251 package is a surface mount package that provides good heat dissipation and stable mechanical strength, suitable for medium power applications. Its package design makes the MOSFET perform well in heat dissipation, which helps to extend the service life of the component.
2. **Configuration**: Single N-channel
- **Description**: CED02N6G-VB is a single N-channel MOSFET suitable for positive current controlled circuits, providing efficient switching and regulation functions.
3. **VDS (Drain-Source Voltage)**: 650V
- **Description**: The maximum drain-source voltage allows the MOSFET to work stably in a high voltage environment, suitable for high voltage applications.
4. **VGS (gate-source voltage)**: ±30V
- **Description**: Supports the maximum voltage range between gate and source, providing flexible control voltage setting.
5. **Vth (threshold voltage)**: 3.5V
- **Description**: The minimum gate voltage that turns on the MOSFET. The relatively high threshold voltage helps to stabilize the conduction at high voltage.
6. **RDS(ON) (on-resistance)**: 4300mΩ @ VGS = 10V
- **Description**: The on-resistance at a gate voltage of 10V affects the conduction loss and power efficiency of the MOSFET. Higher on-resistance increases switching losses, but still provides adequate performance in certain high-voltage applications.
7. **ID (Continuous Drain Current)**: 2A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions, suitable for applications with medium current requirements.
8. **Technology**: Plannar
- **Description**: Plannar technology is a mature MOSFET manufacturing process that is suitable for high voltage applications and provides stable performance and reliability.
Domain and module applications：
Application Examples
1. **High Voltage Switch**:
- CED02N6G-VB is suitable for high voltage switch applications, such as high voltage DC power switch and high voltage load switch. Its high voltage withstand capability ensures reliable switching performance in high voltage environment, suitable for switching scenarios requiring high withstand voltage.
2. **Power Management**:
- In high voltage power management systems, CED02N6G-VB can be used for DC-DC converters and power modules. Its high voltage withstand capability and stable performance support the effective control and management of the power system, ensuring the stability and safety of the power output.
3. **Power Amplifier**:
- In power amplifier applications, especially in high voltage signal amplifiers, CED02N6G-VB's high voltage handling capability and reliability make it an ideal choice. Its stable high voltage performance ensures stable operation of the power amplifier in a high voltage environment.
4. **Industrial Control**:
- In industrial automation and control systems, CED02N6G-VB can be used for high voltage control applications such as high voltage motor control and high voltage load switching. Its high voltage withstand capability and reliability make it suitable for control applications in various industrial equipment.
5. **Motor Drive**:
- In motor drive systems such as high voltage motor drive and high voltage inverter applications, the high voltage withstand capability and medium current handling capability of CED02N6G-VB support the effective drive and control of the motor.
The high voltage capability, stable performance and Plannar technology of CEBF630B-VB MOSFET make it have a wide range of application prospects in high voltage switching, power management, power amplifier, industrial control and motor drive.
1. **High Voltage Switch**:
- CED02N6G-VB is suitable for high voltage switch applications, such as high voltage DC power switch and high voltage load switch. Its high voltage withstand capability ensures reliable switching performance in high voltage environment, suitable for switching scenarios requiring high withstand voltage.
2. **Power Management**:
- In high voltage power management systems, CED02N6G-VB can be used for DC-DC converters and power modules. Its high voltage withstand capability and stable performance support the effective control and management of the power system, ensuring the stability and safety of the power output.
3. **Power Amplifier**:
- In power amplifier applications, especially in high voltage signal amplifiers, CED02N6G-VB's high voltage handling capability and reliability make it an ideal choice. Its stable high voltage performance ensures stable operation of the power amplifier in a high voltage environment.
4. **Industrial Control**:
- In industrial automation and control systems, CED02N6G-VB can be used for high voltage control applications such as high voltage motor control and high voltage load switching. Its high voltage withstand capability and reliability make it suitable for control applications in various industrial equipment.
5. **Motor Drive**:
- In motor drive systems such as high voltage motor drive and high voltage inverter applications, the high voltage withstand capability and medium current handling capability of CED02N6G-VB support the effective drive and control of the motor.
The high voltage capability, stable performance and Plannar technology of CEBF630B-VB MOSFET make it have a wide range of application prospects in high voltage switching, power management, power amplifier, industrial control and motor drive.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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