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CED01N7-VB Product details

Product introduction:

Product Introduction



**CED01N7-VB** is a high-voltage single-channel N-channel MOSFET in TO251 package, using SJ_Multi-EPI technology. This MOSFET is designed to handle high-voltage applications, with a drain-source voltage (VDS) capability of up to 700V, and can operate stably in a high-voltage environment. Its maximum gate-source voltage (VGS) is ±30V, and the gate threshold voltage (Vth) is 3.5V. When the gate-source voltage is 10V, the on-resistance (RDS(ON)) is 2400mΩ. The maximum drain current (ID) of this MOSFET is 2A, which is suitable for high voltage and relatively low current applications.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 700V 3.5V 2A 2400mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 700V 3.5V 2A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 700V 3.5V 2A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
Detailed parameter description



- **Model**: CED01N7-VB

- **Package**: TO251

- **Configuration**: Single channel N-channel

- **Maximum drain-source voltage (VDS)**: 700V

- **Maximum gate-source voltage (VGS)**: ±30V

- **Gate threshold voltage (Vth)**: 3.5V

- **On-resistance (RDS(ON))**: 2400mΩ @ VGS=10V

- **Maximum drain current (ID)**: 2A

- **Technology**: SJ_Multi-EPI



Domain and module applications:

Application fields and modules



**CED01N7-VB** MOSFET has a wide range of applications in multiple fields and modules, especially in high voltage environments, the specific applications are as follows:



1. **High voltage power supply**:

- In high voltage power supply design, CEB01N7-VB can be used as a switching element for the control of high voltage power supply modules.

- Due to its high drain-source voltage capability (700V), this MOSFET is suitable for power converters and power management systems that need to handle high voltages, ensuring efficient power switching operation and load protection.



2. **Motor drive**:

- In high voltage motor drive systems, this MOSFET can be used as a switching element in motor control circuits to control current flow and motor operation.

- Its high voltage handling capability makes it suitable for high voltage motor control applications, such as switching control of industrial motors and high voltage DC motors.



3. **Inverter**:

- In inverter systems, CEB01N7-VB is suitable for high voltage DC-AC inverter switching elements, converting high voltage DC current to AC current.

- Its high voltage withstand capability and stable on-resistance help improve the efficiency and reliability of inverters, especially in solar inverters and wind inverters.



4. **High Voltage Switch**:

- In high voltage switch modules, this MOSFET can be used as a high voltage switch in the circuit to isolate and switch high voltage loads.

- Suitable for switch control in high voltage power systems, such as switching operation and protection of high voltage DC power supplies.



5. **Industrial Control**:

- In industrial control systems, CED01N7-VB is suitable for high voltage control and protection circuits, such as high voltage relays and power modules.

- Its high voltage capability and stable performance enable it to provide reliable switching functions in industrial equipment and control systems.



These application examples demonstrate the importance of the CED01N7-VB MOSFET in high voltage and high voltage applications, effectively meeting the switching control and current handling requirements in high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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