CED01N7-VB Product details
Product introduction:
**CED01N7-VB** is a high-voltage single-channel N-channel MOSFET in TO251 package, using SJ_Multi-EPI technology. This MOSFET is designed to handle high-voltage applications, with a drain-source voltage (VDS) capability of up to 700V, and can operate stably in a high-voltage environment. Its maximum gate-source voltage (VGS) is ±30V, and the gate threshold voltage (Vth) is 3.5V. When the gate-source voltage is 10V, the on-resistance (RDS(ON)) is 2400mΩ. The maximum drain current (ID) of this MOSFET is 2A, which is suitable for high voltage and relatively low current applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | 2400mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Model**: CED01N7-VB
- **Package**: TO251
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2400mΩ @ VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
**CED01N7-VB** MOSFET has a wide range of applications in multiple fields and modules, especially in high voltage environments, the specific applications are as follows:
1. **High voltage power supply**:
- In high voltage power supply design, CEB01N7-VB can be used as a switching element for the control of high voltage power supply modules.
- Due to its high drain-source voltage capability (700V), this MOSFET is suitable for power converters and power management systems that need to handle high voltages, ensuring efficient power switching operation and load protection.
2. **Motor drive**:
- In high voltage motor drive systems, this MOSFET can be used as a switching element in motor control circuits to control current flow and motor operation.
- Its high voltage handling capability makes it suitable for high voltage motor control applications, such as switching control of industrial motors and high voltage DC motors.
3. **Inverter**:
- In inverter systems, CEB01N7-VB is suitable for high voltage DC-AC inverter switching elements, converting high voltage DC current to AC current.
- Its high voltage withstand capability and stable on-resistance help improve the efficiency and reliability of inverters, especially in solar inverters and wind inverters.
4. **High Voltage Switch**:
- In high voltage switch modules, this MOSFET can be used as a high voltage switch in the circuit to isolate and switch high voltage loads.
- Suitable for switch control in high voltage power systems, such as switching operation and protection of high voltage DC power supplies.
5. **Industrial Control**:
- In industrial control systems, CED01N7-VB is suitable for high voltage control and protection circuits, such as high voltage relays and power modules.
- Its high voltage capability and stable performance enable it to provide reliable switching functions in industrial equipment and control systems.
These application examples demonstrate the importance of the CED01N7-VB MOSFET in high voltage and high voltage applications, effectively meeting the switching control and current handling requirements in high voltage environments.
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