CED01N6-VB Product details
Product introduction:
CED01N6-VB is a high voltage N-channel MOSFET produced by Nexperia and packaged in TO251. This MOSFET adopts Plannar technology and is designed for high voltage applications, especially suitable for occasions that require high voltage resistance. CED01N6-VB can operate stably at a drain-source voltage of up to 650V, with high on-resistance and moderate drain current capability. Its excellent electrical characteristics make it outstanding in high voltage switching and power management applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
| Parameter| Value|
|-------------------|-------------------------------|
| Package| TO251 |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 650V |
| Gate-source voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 4300mΩ @ VGS=10V |
| Maximum drain current (ID) | 2A |
| Technology| Planar technology (Plannar) |
Domain and module applications:
CED01N6-VB MOSFET is suitable for the following fields and modules:
1. **High voltage switch**:
- **Power switch**: In high voltage power switch systems, CED01N6-VB is able to handle voltages up to 650V and is suitable for high voltage power switches and control circuits. Its relatively high on-resistance makes it suitable for high voltage applications that do not require particularly high current.
- **High voltage protection circuit**: Used in high voltage protection circuits, this MOSFET is able to withstand high voltages and provide the necessary switching functions to protect the circuit from overvoltage damage.
2. **Power management**:
- **Power converter**: In high voltage power converters, CED01N6-VB's high drain-source voltage and moderate on-resistance enable it to provide stable switching performance during power conversion, making it suitable for high voltage power conversion modules.
- **Power Regulation Module**: In power management applications that require high voltage regulation, this MOSFET can effectively handle high voltages and provide reliable switching control, suitable for power regulation and control modules.
3. **Industrial Control**:
- **High Voltage Drive**: In industrial control systems, CED01N6-VB can handle high voltage drive requirements and is suitable for control systems that require high voltage switches, such as high voltage drive circuits and control modules.
- **Load Switch**: Used in industrial load switch applications, this MOSFET can handle high voltage loads and is suitable for applications that require high voltage and power control.
4. **Electrical Equipment**:
- **Household Electrical Equipment**: In some household electrical equipment that requires high voltage processing, CED01N6-VB can provide stable high voltage switching performance and is suitable for power management of power tools and home appliances.
- **Power Protection System**: In household and industrial power protection systems, this MOSFET can withstand high voltages and provide effective protection functions for the power system.
CED01N6-VB MOSFET performs well in high voltage applications and is suitable for a variety of electronic devices and systems that require high voltage resistance.
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