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CED01N6G-VB Product details
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CED01N6G-VB MOSFET Product Introduction
**Model**: CED01N6G-VB
**Package**: TO251
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 650V
**Maximum gate-source voltage (VGS)**: ±30V
**Threshold voltage (Vth)**: 3.5V
**On-resistance (RDS(ON))**: 4300mΩ@VGS=10V
**Maximum drain current (ID)**: 2A
**Technology**: Plannar
CED01N6G-VB is a high voltage N-channel power MOSFET manufactured using Plannar technology with high drain-source voltage and stable performance. It is packaged in TO251 and is suitable for various applications requiring high voltage tolerance. Despite the relatively high on-resistance, its high voltage capability and durability make it an excellent performer in certain application scenarios.
**Model**: CED01N6G-VB
**Package**: TO251
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 650V
**Maximum gate-source voltage (VGS)**: ±30V
**Threshold voltage (Vth)**: 3.5V
**On-resistance (RDS(ON))**: 4300mΩ@VGS=10V
**Maximum drain current (ID)**: 2A
**Technology**: Plannar
CED01N6G-VB is a high voltage N-channel power MOSFET manufactured using Plannar technology with high drain-source voltage and stable performance. It is packaged in TO251 and is suitable for various applications requiring high voltage tolerance. Despite the relatively high on-resistance, its high voltage capability and durability make it an excellent performer in certain application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V (typical)
- **On-resistance (RDS(ON))**:
- 4300mΩ@VGS=10V
- **Maximum drain current (ID)**: 2A
- **Drain-source breakdown voltage (BVDSS)**: 650V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±30V
- **Power dissipation (Ptot)**: 40W
- **Junction-to-ambient thermal resistance (RθJA)**: 62°C/W
- **Junction-to-Case Thermal Resistance (RθJC)**: 2.2°C/W
- **Operating Junction Temperature Range**: -55°C to +150°C
- **Storage Temperature Range**: -55°C to +150°C
- **Technology**: Plannar
- **Package type**: TO251
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V (typical)
- **On-resistance (RDS(ON))**:
- 4300mΩ@VGS=10V
- **Maximum drain current (ID)**: 2A
- **Drain-source breakdown voltage (BVDSS)**: 650V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±30V
- **Power dissipation (Ptot)**: 40W
- **Junction-to-ambient thermal resistance (RθJA)**: 62°C/W
- **Junction-to-Case Thermal Resistance (RθJC)**: 2.2°C/W
- **Operating Junction Temperature Range**: -55°C to +150°C
- **Storage Temperature Range**: -55°C to +150°C
- **Technology**: Plannar
Domain and module applications：
Applications and module examples
1. **High-voltage power switch**: The high drain-source voltage of CED01N6G-VB makes it suitable for high-voltage power switch applications. In these applications, MOSFETs can effectively withstand and control high voltages, ensuring the reliability of the power system.
2. **Motor drive**: Although its on-resistance is high, CED01N6G-VB can be used to control high-voltage motors in motor drive applications. Its high withstand voltage performance provides stable switching operation in high-voltage motor control systems.
3. **Power management**: In power management systems that require high voltage tolerance, CED01N6G-VB can be used as a switching element. It can handle the switching needs in high-voltage applications and is suitable for power conversion and current control modules.
4. **Inverter**: In inverter circuits, CED01N6G-VB's high voltage capability enables it to handle high voltage inputs and outputs. It is suitable for various inverter applications, such as solar inverters and uninterruptible power supply (UPS) systems.
5. **Protection circuit**: Due to its high voltage tolerance, CED01N6G-VB can be used in protection circuits, such as overvoltage protection and short-circuit protection circuits. It is able to provide necessary protection when abnormally high voltage occurs.
6. **Industrial control system**: In industrial control systems, especially where high voltage control is required, the high voltage withstand characteristics of CED01N6G-VB can meet these requirements and ensure the stability and reliability of the control system.
CED01N6G-VB is a high-voltage N-channel MOSFET suitable for high-voltage power switches, motor drives, power management, inverters, protection circuits and industrial control systems. Its high voltage tolerance and stable performance make it an ideal choice for these applications.
1. **High-voltage power switch**: The high drain-source voltage of CED01N6G-VB makes it suitable for high-voltage power switch applications. In these applications, MOSFETs can effectively withstand and control high voltages, ensuring the reliability of the power system.
2. **Motor drive**: Although its on-resistance is high, CED01N6G-VB can be used to control high-voltage motors in motor drive applications. Its high withstand voltage performance provides stable switching operation in high-voltage motor control systems.
3. **Power management**: In power management systems that require high voltage tolerance, CED01N6G-VB can be used as a switching element. It can handle the switching needs in high-voltage applications and is suitable for power conversion and current control modules.
4. **Inverter**: In inverter circuits, CED01N6G-VB's high voltage capability enables it to handle high voltage inputs and outputs. It is suitable for various inverter applications, such as solar inverters and uninterruptible power supply (UPS) systems.
5. **Protection circuit**: Due to its high voltage tolerance, CED01N6G-VB can be used in protection circuits, such as overvoltage protection and short-circuit protection circuits. It is able to provide necessary protection when abnormally high voltage occurs.
6. **Industrial control system**: In industrial control systems, especially where high voltage control is required, the high voltage withstand characteristics of CED01N6G-VB can meet these requirements and ensure the stability and reliability of the control system.
CED01N6G-VB is a high-voltage N-channel MOSFET suitable for high-voltage power switches, motor drives, power management, inverters, protection circuits and industrial control systems. Its high voltage tolerance and stable performance make it an ideal choice for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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