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CED01N65-VB Product details
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Product Introduction
CED01N65-VB is a high voltage single N-channel power MOSFET in TO251 package. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V and is manufactured using planar technology (Plannar). Although its on-resistance is relatively high, its high voltage withstand capability and stable current handling capability make it suitable for use in high voltage applications. CED01N65-VB is a reliable choice in high voltage switching and protection circuits, capable of withstanding large voltage loads and ensuring system stability.
CED01N65-VB is a high voltage single N-channel power MOSFET in TO251 package. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V and is manufactured using planar technology (Plannar). Although its on-resistance is relatively high, its high voltage withstand capability and stable current handling capability make it suitable for use in high voltage applications. CED01N65-VB is a reliable choice in high voltage switching and protection circuits, capable of withstanding large voltage loads and ensuring system stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology type**: Planar technology
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology type**: Planar technology
Domain and module applications：
Application fields and module examples
The design features of CED01N65-VB enable it to perform well in the following fields and modules:
1. **High voltage switch**: In high voltage switch applications, CED01N65-VB can withstand drain-source voltages up to 650V, suitable for high voltage power conversion and switch mode power supplies (SMPS), ensuring reliable operation in high voltage environments.
2. **Power protection**: In power protection circuits, such as overvoltage protection and overcurrent protection, CED01N65-VB provides high voltage tolerance, which helps protect the power system from damage caused by overvoltage and overcurrent, and improves the stability and safety of the system.
3. **Industrial power supply**: In industrial power supply systems, the high voltage and medium current capabilities of CED01N65-VB make it suitable for high voltage switching and protection functions of industrial equipment, ensuring stable operation of the equipment.
4. **Converters and Inverters**: In converter and inverter circuits, this MOSFET can handle high voltages and is suitable for high voltage applications such as photovoltaic inverters and power converters.
5. **Battery Management System**: In battery management systems, the high voltage tolerance of CED01N65-VB enables it to be used in battery protection circuits to prevent high voltage from damaging the battery and ensure system safety and reliability.
These application examples demonstrate the reliable performance of CED01N65-VB in high voltage environments, making it a key component in high voltage power systems and protection circuits.
The design features of CED01N65-VB enable it to perform well in the following fields and modules:
1. **High voltage switch**: In high voltage switch applications, CED01N65-VB can withstand drain-source voltages up to 650V, suitable for high voltage power conversion and switch mode power supplies (SMPS), ensuring reliable operation in high voltage environments.
2. **Power protection**: In power protection circuits, such as overvoltage protection and overcurrent protection, CED01N65-VB provides high voltage tolerance, which helps protect the power system from damage caused by overvoltage and overcurrent, and improves the stability and safety of the system.
3. **Industrial power supply**: In industrial power supply systems, the high voltage and medium current capabilities of CED01N65-VB make it suitable for high voltage switching and protection functions of industrial equipment, ensuring stable operation of the equipment.
4. **Converters and Inverters**: In converter and inverter circuits, this MOSFET can handle high voltages and is suitable for high voltage applications such as photovoltaic inverters and power converters.
5. **Battery Management System**: In battery management systems, the high voltage tolerance of CED01N65-VB enables it to be used in battery protection circuits to prevent high voltage from damaging the battery and ensure system safety and reliability.
These application examples demonstrate the reliable performance of CED01N65-VB in high voltage environments, making it a key component in high voltage power systems and protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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