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CEBF630B-VB Product details
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CEBF630B-VB MOSFET Product Introduction
CEBF630B-VB is a high voltage N-channel MOSFET in TO263 package type, designed for high voltage and high current applications. The MOSFET has a maximum drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) range of ±20V. Its on-resistance (RDS(ON)) is 300mΩ at VGS = 10V and the maximum drain current (ID) is 10A. Using Trench technology, CEBF630B-VB provides excellent switching performance and reliable current handling capabilities, suitable for high voltage switching and power management applications.
CEBF630B-VB is a high voltage N-channel MOSFET in TO263 package type, designed for high voltage and high current applications. The MOSFET has a maximum drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) range of ±20V. Its on-resistance (RDS(ON)) is 300mΩ at VGS = 10V and the maximum drain current (ID) is 10A. Using Trench technology, CEBF630B-VB provides excellent switching performance and reliable current handling capabilities, suitable for high voltage switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | 300mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO263
- **Description**: The TO263 package is a surface mount package with good heat dissipation performance and mechanical strength, suitable for medium and high power applications. Its large pin area and heat sink help to effectively dissipate heat.
2. **Configuration**: Single N-channel
- **Description**: The CEBF630B-VB is a single N-channel configuration, suitable for positive current controlled circuits, providing efficient switching and regulation functions.
3. **VDS (Drain-Source Voltage)**: 200V
- **Description**: The maximum drain-source voltage ensures that the MOSFET works stably in a high voltage environment, suitable for applications requiring high voltage.
4. **VGS (gate-source voltage)**: ±20V
- **Description**: Supports the maximum voltage range between the gate and the source, allowing flexible control voltage settings.
5. **Vth (threshold voltage)**: 3V
- **Description**: The minimum gate voltage that turns on the MOSFET. The relatively high threshold voltage helps to stabilize the conduction at higher voltages.
6. **RDS(ON) (on-resistance)**: 300mΩ @ VGS = 10V
- **Description**: The on-resistance at a gate voltage of 10V affects the conduction loss and power efficiency of the MOSFET. Lower on-resistance helps improve system efficiency and reduce energy loss.
7. **ID (Continuous Drain Current)**: 10A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions, ensuring stability and reliability in high current applications.
8. **Technology**: Trench
- **Description**: Trench technology optimizes the on-resistance and switching performance of the MOSFET, providing a high-efficiency and low-power solution.
1. **Package**: TO263
- **Description**: The TO263 package is a surface mount package with good heat dissipation performance and mechanical strength, suitable for medium and high power applications. Its large pin area and heat sink help to effectively dissipate heat.
2. **Configuration**: Single N-channel
- **Description**: The CEBF630B-VB is a single N-channel configuration, suitable for positive current controlled circuits, providing efficient switching and regulation functions.
3. **VDS (Drain-Source Voltage)**: 200V
- **Description**: The maximum drain-source voltage ensures that the MOSFET works stably in a high voltage environment, suitable for applications requiring high voltage.
4. **VGS (gate-source voltage)**: ±20V
- **Description**: Supports the maximum voltage range between the gate and the source, allowing flexible control voltage settings.
5. **Vth (threshold voltage)**: 3V
- **Description**: The minimum gate voltage that turns on the MOSFET. The relatively high threshold voltage helps to stabilize the conduction at higher voltages.
6. **RDS(ON) (on-resistance)**: 300mΩ @ VGS = 10V
- **Description**: The on-resistance at a gate voltage of 10V affects the conduction loss and power efficiency of the MOSFET. Lower on-resistance helps improve system efficiency and reduce energy loss.
7. **ID (Continuous Drain Current)**: 10A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions, ensuring stability and reliability in high current applications.
8. **Technology**: Trench
- **Description**: Trench technology optimizes the on-resistance and switching performance of the MOSFET, providing a high-efficiency and low-power solution.
Domain and module applications：
Application Examples
1. **Power Management**:
- CEBF630B-VB is suitable for high voltage power management systems such as DC-DC converters and power modules. Its high voltage tolerance and low on-resistance help improve power conversion efficiency, reduce power loss, and ensure stable power output.
2. **High Voltage Switch**:
- In high voltage switching applications such as switching power supplies and load switches, the high voltage handling capability and reliability of CEBF630B-VB make it an ideal choice. Its excellent switching performance can effectively manage switching operations in high voltage environments.
3. **Power Amplifier**:
- In power amplifiers, especially in application scenarios requiring high voltage and high power, the high voltage tolerance and low on-resistance of CEBF630B-VB help achieve efficient signal amplification.
4. **Industrial Control**:
- In industrial automation and control systems, CEBF630B-VB can be used for high voltage switching applications. Its stable high voltage handling capability and low on-resistance make it suitable for high power control and management in industrial equipment.
5. **Automotive Electronics**:
- In automotive electronic systems, such as on-board power management and high voltage load control, the high voltage capability and reliability of CEBF630B-VB are suitable for various on-board electrical devices. Its low on-resistance helps reduce energy loss and improve overall system efficiency.
The high voltage capability, low on-resistance and Trench technology of CEBF630B-VB MOSFET make it have a wide range of application prospects in power management, high voltage switching, power amplifiers, industrial control and automotive electronics.
1. **Power Management**:
- CEBF630B-VB is suitable for high voltage power management systems such as DC-DC converters and power modules. Its high voltage tolerance and low on-resistance help improve power conversion efficiency, reduce power loss, and ensure stable power output.
2. **High Voltage Switch**:
- In high voltage switching applications such as switching power supplies and load switches, the high voltage handling capability and reliability of CEBF630B-VB make it an ideal choice. Its excellent switching performance can effectively manage switching operations in high voltage environments.
3. **Power Amplifier**:
- In power amplifiers, especially in application scenarios requiring high voltage and high power, the high voltage tolerance and low on-resistance of CEBF630B-VB help achieve efficient signal amplification.
4. **Industrial Control**:
- In industrial automation and control systems, CEBF630B-VB can be used for high voltage switching applications. Its stable high voltage handling capability and low on-resistance make it suitable for high power control and management in industrial equipment.
5. **Automotive Electronics**:
- In automotive electronic systems, such as on-board power management and high voltage load control, the high voltage capability and reliability of CEBF630B-VB are suitable for various on-board electrical devices. Its low on-resistance helps reduce energy loss and improve overall system efficiency.
The high voltage capability, low on-resistance and Trench technology of CEBF630B-VB MOSFET make it have a wide range of application prospects in power management, high voltage switching, power amplifiers, industrial control and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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