CEB9060R-VB Product details
Product introduction:
**CEB9060R-VB** is a high-performance single-channel N-channel MOSFET in TO263 package using Trench technology. This MOSFET is designed to handle medium-to-high voltage and ultra-high current applications, with excellent current carrying capability and low on-resistance. Its maximum drain-source voltage (VDS) is 60V, and its maximum gate-source voltage (VGS) is ±20V. The gate threshold voltage (Vth) is 3V, and the on-resistance (RDS(ON)) is 4mΩ when the gate-source voltage is 10V. The maximum drain current (ID) of this MOSFET is 150A, making it particularly suitable for applications requiring high current handling and low power loss.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: CEB9060R-VB
- **Package**: TO263
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications:
**CEB9060R-VB** MOSFET has a wide range of applications in multiple fields and modules, as follows:
1. **Power Management System**:
- In power management systems, CEB9060R-VB can be used for switching and controlling high current loads. For example, in power distribution and battery management systems, this MOSFET can be used as a load switch to improve the efficiency and reliability of the system.
- Its low on-resistance and high current carrying capacity help reduce energy losses and improve the overall performance of the power system.
2. **Switching Power Supply**:
- In switching power supply modules, this MOSFET is suitable for high power DC-DC converters and power adapters.
- The high current handling capability and low on-resistance make it excel in these high power applications, effectively improving power conversion efficiency and ensuring stable output.
3. **Motor Drive**:
- In motor drive systems, the CEB9060R-VB can be used as a switching element in high-current motor control circuits.
- Its high current capability and low on-resistance make it suitable for driving high-power motors, such as industrial motors and motor control applications in electric vehicles, ensuring efficient operation and reliability.
4. **Automotive Electronics**:
- In automotive electronic systems, this MOSFET is suitable for battery management, power switching, and high-current load protection.
- Due to its high current handling capability and low on-resistance, the CEB9060R-VB can provide stable and efficient performance in various automotive applications, supporting systems such as electric vehicles and on-board chargers.
5. **Industrial Automation**:
- In industrial automation systems, the CEB9060R-VB is suitable for switching and control circuits of high-current loads, such as industrial controllers, high-current relays, and power switches.
- Its excellent current handling capability and low on-resistance enable it to have efficient performance and reliability in industrial equipment, suitable for a variety of industrial applications.
Through these application examples, we can see the importance of CEB9060R-VB MOSFET in power management, switching power supply, motor drive and other fields, and can effectively meet the needs of medium-high voltage and ultra-high current applications.
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