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CEB85N75-VB Product details
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CEB85N75-VB MOSFET Product Introduction
**Model**: CEB85N75-VB
**Package**: TO263
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 80V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 3V
**On-resistance (RDS(ON))**: 10mΩ@VGS=4.5V
**On-resistance (RDS(ON))**: 6mΩ@VGS=10V
**Maximum drain current (ID)**: 120A
**Technology**: Trench
CEB85N75-VB is a high-performance N-channel power MOSFET manufactured using advanced Trench technology. It is designed with extremely low on-resistance and high current handling capability, suitable for applications requiring high efficiency and high power handling. The TO263 package provides a good thermal management solution and is suitable for applications in various electronic devices and modules.
**Model**: CEB85N75-VB
**Package**: TO263
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 80V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 3V
**On-resistance (RDS(ON))**: 10mΩ@VGS=4.5V
**On-resistance (RDS(ON))**: 6mΩ@VGS=10V
**Maximum drain current (ID)**: 120A
**Technology**: Trench
CEB85N75-VB is a high-performance N-channel power MOSFET manufactured using advanced Trench technology. It is designed with extremely low on-resistance and high current handling capability, suitable for applications requiring high efficiency and high power handling. The TO263 package provides a good thermal management solution and is suitable for applications in various electronic devices and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V (typical)
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 6mΩ@VGS=10V
- **Maximum drain current (ID)**: 120A
- **Drain-source breakdown voltage (BVDSS)**: 80V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 100W
- **Junction-to-ambient thermal resistance (RθJA)**: 30°C/W
- **Junction-to-case thermal resistance (RθJC)**: 1.2°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V (typical)
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 6mΩ@VGS=10V
- **Maximum drain current (ID)**: 120A
- **Drain-source breakdown voltage (BVDSS)**: 80V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 100W
- **Junction-to-ambient thermal resistance (RθJA)**: 30°C/W
- **Junction-to-case thermal resistance (RθJC)**: 1.2°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High-efficiency DC-DC converters**: The low on-resistance and high current handling capability of CEB85N75-VB make it very suitable for use in DC-DC converters. It can efficiently convert voltages and handle large currents, reducing power losses during the conversion process and improving the overall efficiency of the system.
2. **Power management systems**: In power management systems, this MOSFET can handle high current loads and has a low on-resistance, thereby reducing power consumption and heat generation, and improving system reliability and stability.
3. **Motor drive applications**: The high current capability of CEB85N75-VB makes it suitable for use in motor drive modules, especially in motor control systems that require high power and high efficiency. It can effectively switch motor loads to ensure smooth and reliable motor operation.
4. **Power amplifiers**: In power amplifier applications, the low on-resistance and high current handling capability of CEB85N75-VB support high power output, suitable for high-performance power amplifier designs.
5. **Automotive electronics**: In automotive electronic systems, CEB85N75-VB can be used in applications such as power distribution, load switching and battery management, providing high-efficiency switching control and enhancing system stability and safety.
6. **Power switch**: As a power switch, CEB85N75-VB provides efficient switching capabilities, especially in high-power applications such as power conversion and current control. Its low on-resistance and high current capability ensure efficient power switching operation.
CEB85N75-VB is a high-current, low on-resistance N-channel power MOSFET that is widely used in high-efficiency DC-DC converters, power management systems, motor drives, power amplifiers, automotive electronics and power switches. Its excellent performance makes it an ideal choice for a variety of high-power applications.
1. **High-efficiency DC-DC converters**: The low on-resistance and high current handling capability of CEB85N75-VB make it very suitable for use in DC-DC converters. It can efficiently convert voltages and handle large currents, reducing power losses during the conversion process and improving the overall efficiency of the system.
2. **Power management systems**: In power management systems, this MOSFET can handle high current loads and has a low on-resistance, thereby reducing power consumption and heat generation, and improving system reliability and stability.
3. **Motor drive applications**: The high current capability of CEB85N75-VB makes it suitable for use in motor drive modules, especially in motor control systems that require high power and high efficiency. It can effectively switch motor loads to ensure smooth and reliable motor operation.
4. **Power amplifiers**: In power amplifier applications, the low on-resistance and high current handling capability of CEB85N75-VB support high power output, suitable for high-performance power amplifier designs.
5. **Automotive electronics**: In automotive electronic systems, CEB85N75-VB can be used in applications such as power distribution, load switching and battery management, providing high-efficiency switching control and enhancing system stability and safety.
6. **Power switch**: As a power switch, CEB85N75-VB provides efficient switching capabilities, especially in high-power applications such as power conversion and current control. Its low on-resistance and high current capability ensure efficient power switching operation.
CEB85N75-VB is a high-current, low on-resistance N-channel power MOSFET that is widely used in high-efficiency DC-DC converters, power management systems, motor drives, power amplifiers, automotive electronics and power switches. Its excellent performance makes it an ideal choice for a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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