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CEB80N75-VB Product details
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CEB80N75-VB MOSFET Product Introduction
CEB80N75-VB is a high-performance N-channel MOSFET in TO263 package type, designed for high current and low on-resistance applications. The MOSFET has a maximum drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) range of ±20V. Its on-resistance (RDS(ON)) is 6mΩ at VGS = 10V and the maximum drain current (ID) is 120A. Using Trench technology, CEB80N75-VB provides excellent switching performance and low on-resistance, suitable for efficient power management and switching applications.
CEB80N75-VB is a high-performance N-channel MOSFET in TO263 package type, designed for high current and low on-resistance applications. The MOSFET has a maximum drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) range of ±20V. Its on-resistance (RDS(ON)) is 6mΩ at VGS = 10V and the maximum drain current (ID) is 120A. Using Trench technology, CEB80N75-VB provides excellent switching performance and low on-resistance, suitable for efficient power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO263
- **Description**: The TO263 package is a surface mount package with good heat dissipation performance and mechanical strength, suitable for medium and high power applications. Its large pin area and heat sink help to effectively dissipate heat.
2. **Configuration**: Single N-channel
- **Description**: The CEB80N75-VB is a single N-channel configuration, suitable for positive current control circuits, providing efficient switching and regulation functions.
3. **VDS (Drain-Source Voltage)**: 80V
- **Description**: The maximum drain-source voltage ensures that the MOSFET works stably in a high voltage environment, suitable for applications requiring medium voltage.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: Supports a maximum voltage range between the gate and the source, allowing flexible control voltage settings.
5. **Vth (Threshold Voltage)**: 3V
- **Description**: The minimum gate voltage that turns on the MOSFET. A relatively high threshold voltage helps to stabilize the conduction at higher voltages.
6. **RDS(ON) (On-Resistance)**: 10mΩ @ VGS = 4.5V, 6mΩ @ VGS = 10V
- **Description**: The on-resistance at different gate voltages affects the conduction loss and power efficiency of the MOSFET. Lower on-resistance improves system efficiency and reduces energy loss.
7. **ID (Continuous Drain Current)**: 120A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions, ensuring stability and reliability in high current applications.
8. **Technology**: Trench
- **Description**: Trench technology optimizes the on-resistance and switching performance of MOSFET, providing high-efficiency and low-power solutions.
1. **Package**: TO263
- **Description**: The TO263 package is a surface mount package with good heat dissipation performance and mechanical strength, suitable for medium and high power applications. Its large pin area and heat sink help to effectively dissipate heat.
2. **Configuration**: Single N-channel
- **Description**: The CEB80N75-VB is a single N-channel configuration, suitable for positive current control circuits, providing efficient switching and regulation functions.
3. **VDS (Drain-Source Voltage)**: 80V
- **Description**: The maximum drain-source voltage ensures that the MOSFET works stably in a high voltage environment, suitable for applications requiring medium voltage.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: Supports a maximum voltage range between the gate and the source, allowing flexible control voltage settings.
5. **Vth (Threshold Voltage)**: 3V
- **Description**: The minimum gate voltage that turns on the MOSFET. A relatively high threshold voltage helps to stabilize the conduction at higher voltages.
6. **RDS(ON) (On-Resistance)**: 10mΩ @ VGS = 4.5V, 6mΩ @ VGS = 10V
- **Description**: The on-resistance at different gate voltages affects the conduction loss and power efficiency of the MOSFET. Lower on-resistance improves system efficiency and reduces energy loss.
7. **ID (Continuous Drain Current)**: 120A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions, ensuring stability and reliability in high current applications.
8. **Technology**: Trench
- **Description**: Trench technology optimizes the on-resistance and switching performance of MOSFET, providing high-efficiency and low-power solutions.
Domain and module applications：
Application Examples
1. **Power Management**:
- CEB80N75-VB is suitable for efficient power management systems such as DC-DC converters and power modules. Its low on-resistance and high current capability help improve power conversion efficiency, reduce power loss, and ensure stable power output.
2. **Motor Drive**:
- In motor control systems such as brushless DC motor (BLDC) drives and stepper motor drives, CEB80N75-VB can be used as an efficient switching element to control the current of the motor. Its high current handling capability and low on-resistance ensure that the motor operates efficiently and reliably.
3. **Power Switch**:
- In various power switching applications such as load switches and switching power supplies, CEB80N75-VB's high current capability and low on-resistance make it an ideal choice to provide efficient switching performance and reduce power consumption.
4. **Automotive Electronics**:
- In automotive electronic systems, such as on-board power and load control, the high current capability and reliability of CEB80N75-VB are suitable for various on-board electrical devices. Its low on-resistance helps reduce energy loss and improve overall system efficiency.
5. **Industrial Control**:
- In industrial automation and control systems, CEB80N75-VB can be used for high current switching applications. Its excellent switching performance and high current handling capability make it suitable for high power control and management in industrial equipment.
The low on-resistance, high current capability and Trench technology of CEB80N75-VB MOSFET make it have a wide range of application prospects in power management, motor drive, power switching, automotive electronics and industrial control.
1. **Power Management**:
- CEB80N75-VB is suitable for efficient power management systems such as DC-DC converters and power modules. Its low on-resistance and high current capability help improve power conversion efficiency, reduce power loss, and ensure stable power output.
2. **Motor Drive**:
- In motor control systems such as brushless DC motor (BLDC) drives and stepper motor drives, CEB80N75-VB can be used as an efficient switching element to control the current of the motor. Its high current handling capability and low on-resistance ensure that the motor operates efficiently and reliably.
3. **Power Switch**:
- In various power switching applications such as load switches and switching power supplies, CEB80N75-VB's high current capability and low on-resistance make it an ideal choice to provide efficient switching performance and reduce power consumption.
4. **Automotive Electronics**:
- In automotive electronic systems, such as on-board power and load control, the high current capability and reliability of CEB80N75-VB are suitable for various on-board electrical devices. Its low on-resistance helps reduce energy loss and improve overall system efficiency.
5. **Industrial Control**:
- In industrial automation and control systems, CEB80N75-VB can be used for high current switching applications. Its excellent switching performance and high current handling capability make it suitable for high power control and management in industrial equipment.
The low on-resistance, high current capability and Trench technology of CEB80N75-VB MOSFET make it have a wide range of application prospects in power management, motor drive, power switching, automotive electronics and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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