CEB8030L-VB Product details
Product introduction:
**CEB8030L-VB** is a high-performance single-channel N-channel MOSFET that uses advanced Trench technology and is packaged in TO263. This MOSFET is designed to handle low voltage and high current applications, with excellent current carrying capacity and low on-resistance. Its maximum drain-source voltage (VDS) is 30V, and it can operate stably at a gate-source voltage of ±20V. Its gate threshold voltage (Vth) is 1.7V. At a gate-source voltage of 4.5V, the on-resistance (RDS(ON)) is 2.7mΩ, while at a gate-source voltage of 10V, the on-resistance drops to 2.4mΩ. The maximum drain current (ID) of this MOSFET is 98A, making it particularly suitable for applications requiring high current handling and low power loss.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: CEB8030L-VB
- **Package**: TO263
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 98A
- **Technology**: Trench
Domain and module applications:
**CEB8030L-VB** MOSFET has a wide range of applications in multiple fields and modules, as follows:
1. **Power management system**:
- In the power management system, CEB8030L-VB can be used as a switch and control element for high current loads, managing the switching operation of the power supply and load protection.
- Its low on-resistance and high current capability enable it to improve efficiency, reduce energy loss, and enhance system stability in the power supply system.
2. **Switching power supply**:
- In the switching power supply module, this MOSFET is suitable for low voltage switching control, such as DC-DC converters and power adapters.
- The characteristics of high current handling capability and low on-resistance enable it to excel in high power power supply applications, effectively handling large current loads, thereby optimizing the performance of the power supply.
3. **Motor Drive**:
- In motor drive systems, CEB8030L-VB can be used as a switching element in motor control circuits to provide stable current control and switching operations.
- The high current capability makes it suitable for medium-power motor drive applications, such as industrial motors and automotive motors, ensuring efficient operation of the motors.
4. **Automotive Electronics**:
- In automotive electronic systems, this MOSFET is suitable for battery management, power switching, and load protection.
- High current handling capability and low on-resistance improve the reliability and performance of automotive electronic systems, supporting stable operation of various automotive applications.
5. **Industrial Automation**:
- In industrial automation systems, CEB8030L-VB is suitable for switching and control circuits of high current loads, such as industrial controllers and high current relays.
- Its high current capability and low on-resistance make it perform well in industrial equipment, improving system reliability and efficiency.
These application examples show the importance of CEB8030L-VB MOSFET in multiple fields such as power management, switching power supplies, motor drives, etc., and can effectively meet the needs of low voltage and high current applications.
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