CEB75N10-VB Product details
Product introduction:
CEB75N10-VB is a high-performance N-channel MOSFET produced by Nexperia and packaged in TO263. This MOSFET uses Trench technology and is designed to handle high voltage and high current applications. The CEB75N10-VB can operate stably at a drain-source voltage of up to 100V, has extremely low on-resistance and high drain current capability, and is suitable for a variety of power management and switching applications. Its excellent electrical characteristics enable it to perform well in applications that require high efficiency and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| Parameter| Value|
|-------------------|-------------------------------|
| Package| TO263 |
| Configuration| Single N-channel|
| Maximum drain-source voltage (VDS) | 100V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 2.5V |
| On-resistance (RDS(ON)) | 23mΩ @ VGS=4.5V |
| | 10mΩ @ VGS=10V |
| Maximum drain current (ID) | 100A |
| Technology| Trench |
Domain and module applications:
CEB75N10-VB MOSFET is suitable for the following fields and modules:
1. **Power management**:
- **DC-DC converter**: In DC-DC converters, CEB75N10-VB can handle high voltage and high current power conversion, provide efficient current control and low power consumption, and is particularly suitable for high power power conversion applications.
- **Power switch**: In applications requiring high voltage and high current switching, this MOSFET can effectively reduce power loss and improve switching efficiency, and is suitable for power switch modules and power management circuits.
2. **Industrial control**:
- **Motor drive**: In industrial motor drive systems, CEB75N10-VB can handle high voltage and high current, and is suitable for motor applications requiring high efficiency and high power control, ensuring system stability and performance.
- **Load switch**: For industrial load switch applications, this MOSFET provides high current handling capability and low on-resistance, suitable for control and switching of high power loads.
3. **Electrical equipment**:
- **Household electrical equipment**: In household electrical equipment, CEB75N10-VB can provide efficient switch control and power management, suitable for power switch systems in power tools and household appliances.
- **Power control module**: Suitable for high voltage and high current applications in power control modules, can provide reliable switching performance and low power consumption.
4. **Automotive electronics**:
- **In-vehicle power management**: In automotive power management systems, CEB75N10-VB can handle high voltage and high current, provide efficient current control and switching performance for in-vehicle systems, and is suitable for power systems of electric vehicles and traditional vehicles.
- **In-vehicle switching system**: Suitable for high voltage switching and power management applications in automobiles, ensuring the stability and efficiency of in-vehicle systems.
CEB75N10-VB MOSFET performs well in high voltage and high current applications and is suitable for a variety of electronic devices and systems requiring high performance and low power consumption.
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