中文
English
CEB75N06-VB Product details
Back to previous pageProduct introduction：
CEB75N06-VB MOSFET Product Introduction
**Model**: CEB75N06-VB
**Package**: TO263
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 60V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 3V
**On-resistance (RDS(ON))**: 4mΩ@VGS=10V
**Maximum drain current (ID)**: 150A
**Technology**: Trench
CEB75N06-VB is a high-performance N-channel power MOSFET manufactured using Trench technology and designed for low voltage and high current applications. Its ultra-low on-resistance and high drain current capability enable it to excel in applications requiring high efficiency and high power handling. The TO263 package not only provides good thermal management, but is also suitable for space-constrained designs.
**Model**: CEB75N06-VB
**Package**: TO263
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 60V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 3V
**On-resistance (RDS(ON))**: 4mΩ@VGS=10V
**Maximum drain current (ID)**: 150A
**Technology**: Trench
CEB75N06-VB is a high-performance N-channel power MOSFET manufactured using Trench technology and designed for low voltage and high current applications. Its ultra-low on-resistance and high drain current capability enable it to excel in applications requiring high efficiency and high power handling. The TO263 package not only provides good thermal management, but is also suitable for space-constrained designs.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V (typical)
- **On-resistance (RDS(ON))**: 4mΩ@VGS=10V
- **Maximum drain current (ID)**: 150A
- **Drain-source breakdown voltage (BVDSS)**: 60V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 100W
- **Junction-to-ambient thermal resistance (RθJA)**: 30°C/W
- **Junction-to-Case Thermal Resistance (RθJC)**: 1.2°C/W
- **Operating Junction Temperature Range**: -55°C to +150°C
- **Storage Temperature Range**: -55°C to +150°C
- **Technology**: Trench
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V (typical)
- **On-resistance (RDS(ON))**: 4mΩ@VGS=10V
- **Maximum drain current (ID)**: 150A
- **Drain-source breakdown voltage (BVDSS)**: 60V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 100W
- **Junction-to-ambient thermal resistance (RθJA)**: 30°C/W
- **Junction-to-Case Thermal Resistance (RθJC)**: 1.2°C/W
- **Operating Junction Temperature Range**: -55°C to +150°C
- **Storage Temperature Range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **DC-DC converter**: The low on-resistance and high current handling capability of CEB75N06-VB make it an excellent performer in DC-DC converters, capable of handling high current and high power, providing efficient voltage conversion, and reducing energy loss in the system.
2. **Power management system**: In power management systems, CEB75N06-VB is suitable as a switching element to handle high current requirements. Its low on-resistance can effectively reduce power consumption and improve the overall efficiency of the system.
3. **Motor drive**: This MOSFET can be used for switch control in motor drive modules. Its high current handling capability and low on-resistance make it perform well in motor drive applications with high load and high efficiency requirements.
4. **Power amplifier**: In power amplifier design, the high current handling capability and low on-resistance of CEB75N06-VB can support high power output, meet the stringent requirements for power switches, and improve the performance and stability of the amplifier.
5. **Automotive Electronics**: In automotive electronic systems, such as battery management and power distribution systems, CEB75N06-VB provides efficient switching control and high current handling capabilities, enhancing the reliability and performance of automotive electronic systems.
6. **Power Switch**: In various power switching applications, the high current handling capability and low on-resistance of CEB75N06-VB can ensure efficient power switching operation, especially in situations with high power switching and current handling requirements.
CEB75N06-VB is a high current, low on-resistance N-channel power MOSFET suitable for DC-DC converters, power management systems, motor drives, power amplifiers, automotive electronics and power switches. Its excellent switching performance and high efficiency make it an ideal choice for a variety of high power applications.
1. **DC-DC converter**: The low on-resistance and high current handling capability of CEB75N06-VB make it an excellent performer in DC-DC converters, capable of handling high current and high power, providing efficient voltage conversion, and reducing energy loss in the system.
2. **Power management system**: In power management systems, CEB75N06-VB is suitable as a switching element to handle high current requirements. Its low on-resistance can effectively reduce power consumption and improve the overall efficiency of the system.
3. **Motor drive**: This MOSFET can be used for switch control in motor drive modules. Its high current handling capability and low on-resistance make it perform well in motor drive applications with high load and high efficiency requirements.
4. **Power amplifier**: In power amplifier design, the high current handling capability and low on-resistance of CEB75N06-VB can support high power output, meet the stringent requirements for power switches, and improve the performance and stability of the amplifier.
5. **Automotive Electronics**: In automotive electronic systems, such as battery management and power distribution systems, CEB75N06-VB provides efficient switching control and high current handling capabilities, enhancing the reliability and performance of automotive electronic systems.
6. **Power Switch**: In various power switching applications, the high current handling capability and low on-resistance of CEB75N06-VB can ensure efficient power switching operation, especially in situations with high power switching and current handling requirements.
CEB75N06-VB is a high current, low on-resistance N-channel power MOSFET suitable for DC-DC converters, power management systems, motor drives, power amplifiers, automotive electronics and power switches. Its excellent switching performance and high efficiency make it an ideal choice for a variety of high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
