CEB73A3G-VB Product details
Product introduction:
The CEB73A3G-VB is a high-performance single N-channel power MOSFET packaged in a TO263 package using advanced trench technology. This MOSFET is designed for medium voltage applications and can operate stably at drain-source voltages up to 30V. Its low on-resistance and high current handling capability make it an excellent performer in applications requiring high efficiency and high reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Continuous drain current (ID)**: 70A
- **Technology**: Trench Technology
Domain and module applications:
1. **High-efficiency switching power supply**: The low on-resistance of CEB73A3G-VB makes it very suitable for high-efficiency switching power supply design. It can be used as a switching element in DC-DC converters and switching regulators to improve the energy efficiency of the system and reduce power consumption. It is particularly suitable for power supply applications that require high current and high efficiency.
2. **Motor drive**: In motor drive applications, such as DC motors and stepper motor controllers, the high current handling capability and low on-resistance of CEB73A3G-VB can effectively drive the motor load and ensure the efficient operation of the motor system. It is suitable for motor control modules in various industrial and consumer electronics.
3. **LED drive**: In high-power LED drive circuits, such as LED lamps and display backlight systems, the low on-resistance and high current capability of CEB73A3G-VB can handle larger current loads, provide stable LED drive, improve system efficiency and reduce energy loss.
4. **Automotive electronics**: In automotive electronic systems, the high performance characteristics of CEB73A3G-VB make it suitable for power management and switch control modules. Its low on-resistance and high current handling capability help ensure the stability and efficiency of automotive electrical systems, and are suitable for a variety of automotive electrical applications.
5. **Industrial control**: In industrial control systems, especially power switches and power conversion modules, the high current capability and low on-resistance of CEB73A3G-VB can handle large power requirements, ensure the stable operation and high efficiency of industrial systems, and are suitable for a variety of industrial applications.
In summary, CEB73A3G-VB is a high-efficiency power MOSFET suitable for medium voltage and high current applications. Its low on-resistance and advanced trench technology enable it to perform well in the fields of switching power supplies, motor drives, LED drives, automotive electronics, and industrial controls, providing an ideal solution for a variety of applications that require high efficiency and reliability.
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