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CEB70N06-VB Product details
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CEB70N06-VB MOSFET Product Introduction
CEB70N06-VB is a high-performance N-channel MOSFET in TO263 package type, designed for applications requiring low on-resistance and high current handling capability. This MOSFET has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) range of ±20V. Its on-resistance (RDS(ON)) is 11mΩ at VGS = 10V and the maximum drain current (ID) is 75A. Using Trench technology, this MOSFET provides excellent switching performance and low on-resistance, suitable for high-efficiency power management and switching applications.
CEB70N06-VB is a high-performance N-channel MOSFET in TO263 package type, designed for applications requiring low on-resistance and high current handling capability. This MOSFET has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) range of ±20V. Its on-resistance (RDS(ON)) is 11mΩ at VGS = 10V and the maximum drain current (ID) is 75A. Using Trench technology, this MOSFET provides excellent switching performance and low on-resistance, suitable for high-efficiency power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO263
- **Description**: The TO263 package is a surface mount package that provides good heat dissipation and mechanical strength, suitable for medium and high power applications.
2. **Configuration**: Single N-channel
- **Description**: This MOSFET is a single N-channel configuration, suitable for circuit designs that require positive current control, providing effective switching and regulation functions.
3. **VDS (Drain-Source Voltage)**: 60V
- **Description**: The maximum drain-source voltage ensures that the MOSFET operates stably in a high voltage environment, suitable for applications that require medium voltage.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: Supports a maximum voltage range between the gate and the source, allowing flexible control voltage settings.
5. **Vth (Threshold Voltage)**: 1.7V
- **Description**: The minimum gate voltage that turns on the MOSFET. A lower threshold voltage allows the MOSFET to turn on at a lower gate voltage.
6. **RDS(ON) (On-Resistance)**: 12mΩ @ VGS = 4.5V, 11mΩ @ VGS = 10V
- **Description**: The on-resistance at different gate voltages affects the conduction loss and power efficiency of the MOSFET. Lower on-resistance helps improve the overall efficiency of the system.
7. **ID (Continuous Drain Current)**: 75A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions, ensuring its stability and reliability in high current applications.
8. **Technology**: Trench
- **Description**: Trench technology is used to optimize the on-resistance and switching performance of MOSFET, providing high-efficiency and low-power solutions.
1. **Package**: TO263
- **Description**: The TO263 package is a surface mount package that provides good heat dissipation and mechanical strength, suitable for medium and high power applications.
2. **Configuration**: Single N-channel
- **Description**: This MOSFET is a single N-channel configuration, suitable for circuit designs that require positive current control, providing effective switching and regulation functions.
3. **VDS (Drain-Source Voltage)**: 60V
- **Description**: The maximum drain-source voltage ensures that the MOSFET operates stably in a high voltage environment, suitable for applications that require medium voltage.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: Supports a maximum voltage range between the gate and the source, allowing flexible control voltage settings.
5. **Vth (Threshold Voltage)**: 1.7V
- **Description**: The minimum gate voltage that turns on the MOSFET. A lower threshold voltage allows the MOSFET to turn on at a lower gate voltage.
6. **RDS(ON) (On-Resistance)**: 12mΩ @ VGS = 4.5V, 11mΩ @ VGS = 10V
- **Description**: The on-resistance at different gate voltages affects the conduction loss and power efficiency of the MOSFET. Lower on-resistance helps improve the overall efficiency of the system.
7. **ID (Continuous Drain Current)**: 75A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions, ensuring its stability and reliability in high current applications.
8. **Technology**: Trench
- **Description**: Trench technology is used to optimize the on-resistance and switching performance of MOSFET, providing high-efficiency and low-power solutions.
Domain and module applications：
Application Examples
1. **Power Management**:
- CEB70N06-VB is suitable for power management systems such as DC-DC converters and power modules. Its low on-resistance and high current capability help improve power conversion efficiency, reduce energy loss, and provide stable power output.
2. **Motor Drive**:
- In motor control systems, such as brushless DC motor (BLDC) drives and stepper motor drives, CEB70N06-VB can be used as an efficient switching element to control the current of the motor. Its high current capability and low on-resistance ensure high efficiency and reliability when the motor is running.
3. **Power Switch**:
- In various power switching applications, such as load switches and switching power supplies, CEB70N06-VB's high current handling capability and low on-resistance make it an ideal choice to provide efficient switching performance and reduce power consumption.
4. **Automotive Electronics**:
- In automotive electronic systems, such as on-board power and load control, the high current capability and reliability of CEB70N06-VB are suitable for various on-board electrical devices. Its low on-resistance helps reduce energy loss and improve overall system efficiency.
5. **Industrial Control**:
- In industrial automation and control systems, CEB70N06-VB can be used for high current switching applications. Its excellent switching performance and high current handling capability make it suitable for high power control and management in industrial equipment.
The low on-resistance, high current capability and Trench technology of CEB70N06-VB MOSFET make it have a wide range of application prospects in power management, motor drive, power switching, automotive electronics and industrial control.
1. **Power Management**:
- CEB70N06-VB is suitable for power management systems such as DC-DC converters and power modules. Its low on-resistance and high current capability help improve power conversion efficiency, reduce energy loss, and provide stable power output.
2. **Motor Drive**:
- In motor control systems, such as brushless DC motor (BLDC) drives and stepper motor drives, CEB70N06-VB can be used as an efficient switching element to control the current of the motor. Its high current capability and low on-resistance ensure high efficiency and reliability when the motor is running.
3. **Power Switch**:
- In various power switching applications, such as load switches and switching power supplies, CEB70N06-VB's high current handling capability and low on-resistance make it an ideal choice to provide efficient switching performance and reduce power consumption.
4. **Automotive Electronics**:
- In automotive electronic systems, such as on-board power and load control, the high current capability and reliability of CEB70N06-VB are suitable for various on-board electrical devices. Its low on-resistance helps reduce energy loss and improve overall system efficiency.
5. **Industrial Control**:
- In industrial automation and control systems, CEB70N06-VB can be used for high current switching applications. Its excellent switching performance and high current handling capability make it suitable for high power control and management in industrial equipment.
The low on-resistance, high current capability and Trench technology of CEB70N06-VB MOSFET make it have a wide range of application prospects in power management, motor drive, power switching, automotive electronics and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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