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CEB65A3-VB Product details
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CEB65A3-VB MOSFET Product Introduction
**Model**: CEB65A3-VB
**Package**: TO263
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 30V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 1.7V
**On-resistance (RDS(ON))**: 18mΩ@VGS=4.5V
**On-resistance (RDS(ON))**: 12mΩ@VGS=10V
**Maximum drain current (ID)**: 50A
**Technology**: Trench
CEB65A3-VB is a high-performance N-channel power MOSFET using Trench technology, designed for low voltage and high current applications. Its low on-resistance and high drain current capability make it an excellent performer in applications that require efficient switching and high current handling. The TO263 package makes it suitable for designs that require good thermal management and space optimization.
**Model**: CEB65A3-VB
**Package**: TO263
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 30V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 1.7V
**On-resistance (RDS(ON))**: 18mΩ@VGS=4.5V
**On-resistance (RDS(ON))**: 12mΩ@VGS=10V
**Maximum drain current (ID)**: 50A
**Technology**: Trench
CEB65A3-VB is a high-performance N-channel power MOSFET using Trench technology, designed for low voltage and high current applications. Its low on-resistance and high drain current capability make it an excellent performer in applications that require efficient switching and high current handling. The TO263 package makes it suitable for designs that require good thermal management and space optimization.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V (typical)
- **On-resistance (RDS(ON))**: 18mΩ@VGS=4.5V
- **On-resistance (RDS(ON))**: 12mΩ@VGS=10V
- **Maximum drain current (ID)**: 50A
- **Drain-source breakdown voltage (BVDSS)**: 30V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 60W
- **Junction-to-ambient thermal resistance (RθJA)**: 40°C/W
- **Junction-to-case thermal resistance (RθJC)**: 1.5°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V (typical)
- **On-resistance (RDS(ON))**: 18mΩ@VGS=4.5V
- **On-resistance (RDS(ON))**: 12mΩ@VGS=10V
- **Maximum drain current (ID)**: 50A
- **Drain-source breakdown voltage (BVDSS)**: 30V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 60W
- **Junction-to-ambient thermal resistance (RθJA)**: 40°C/W
- **Junction-to-case thermal resistance (RθJC)**: 1.5°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **DC-DC converter**: The low on-resistance and high current capability of CEB65A3-VB make it ideal for use as a switching element in DC-DC converters. It can efficiently handle high currents and reduce power dissipation during the conversion process, thereby improving overall system efficiency and stability.
2. **Power switch**: The high current handling capability of this MOSFET makes it suitable for use as a power switch, especially in applications that require frequent switching and high current loads. Its low on-resistance ensures low power dissipation and heat loss.
3. **Load switch**: In load switch applications, CEB65A3-VB is able to maintain stable performance under high load conditions. Its high current capability and low power consumption make it an ideal choice in load switching circuits.
4. **Motor drive**: In motor drive modules, such as electric vehicles or industrial motor controllers, CEB65A3-VB can handle large current demands and provide efficient switching control, improving the overall performance and reliability of the motor drive system.
5. **Power Management**: Suitable for various power management modules, including power management and current distribution circuits. The low on-resistance and high current capability of CEB65A3-VB enable it to effectively handle the current flow during power conversion, improving the overall efficiency of the system.
6. **Communication Equipment**: In communication equipment, such as base station power systems and signal processing modules, CEB65A3-VB is able to provide efficient current switching and stability, ensuring that the equipment operates reliably under high load conditions.
CEB65A3-VB is a high-current, low on-resistance N-channel power MOSFET suitable for DC-DC converters, power switches, load switches, motor drives, power management and communication equipment. Its excellent switching performance and high efficiency make it an ideal choice for a variety of high-current applications.
1. **DC-DC converter**: The low on-resistance and high current capability of CEB65A3-VB make it ideal for use as a switching element in DC-DC converters. It can efficiently handle high currents and reduce power dissipation during the conversion process, thereby improving overall system efficiency and stability.
2. **Power switch**: The high current handling capability of this MOSFET makes it suitable for use as a power switch, especially in applications that require frequent switching and high current loads. Its low on-resistance ensures low power dissipation and heat loss.
3. **Load switch**: In load switch applications, CEB65A3-VB is able to maintain stable performance under high load conditions. Its high current capability and low power consumption make it an ideal choice in load switching circuits.
4. **Motor drive**: In motor drive modules, such as electric vehicles or industrial motor controllers, CEB65A3-VB can handle large current demands and provide efficient switching control, improving the overall performance and reliability of the motor drive system.
5. **Power Management**: Suitable for various power management modules, including power management and current distribution circuits. The low on-resistance and high current capability of CEB65A3-VB enable it to effectively handle the current flow during power conversion, improving the overall efficiency of the system.
6. **Communication Equipment**: In communication equipment, such as base station power systems and signal processing modules, CEB65A3-VB is able to provide efficient current switching and stability, ensuring that the equipment operates reliably under high load conditions.
CEB65A3-VB is a high-current, low on-resistance N-channel power MOSFET suitable for DC-DC converters, power switches, load switches, motor drives, power management and communication equipment. Its excellent switching performance and high efficiency make it an ideal choice for a variety of high-current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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