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CEB658N-VB Product details
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Product Introduction
CEB658N-VB is a high-performance single N-channel power MOSFET with a TO263 package. It has a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V and is manufactured using advanced trench technology. This MOSFET is designed for high-voltage applications, provides low on-resistance and high current handling capabilities, and is suitable for applications that require high voltage and high current loads, ensuring stable and efficient performance.
CEB658N-VB is a high-performance single N-channel power MOSFET with a TO263 package. It has a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V and is manufactured using advanced trench technology. This MOSFET is designed for high-voltage applications, provides low on-resistance and high current handling capabilities, and is suitable for applications that require high voltage and high current loads, ensuring stable and efficient performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology type**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology type**: Trench technology
Domain and module applications：
Applications and Module Examples
The design of CEB658N-VB makes it suitable for multiple applications and modules, including:
1. **High Voltage Switch**: In high voltage switching applications, CEB658N-VB can handle drain-source voltages up to 200V, suitable for high voltage power switches and power management systems. Its low on-resistance helps reduce power consumption and ensures efficient switching operations.
2. **Power Converter**: In switch mode power supplies (SMPS) and DC-DC converters, the high voltage capability and low RDS(ON) of CEB658N-VB provide efficient power conversion solutions. Suitable for applications such as power management, voltage regulation and power conditioning.
3. **Automotive Electronics**: Used in automotive power management systems and load control, such as power windows, on-board battery management and other high voltage applications. The high current handling capability and high voltage tolerance of CEB658N-VB ensure the stability and reliability of automotive systems.
4. **LED drive**: In high-power LED drive circuits, CEB658N-VB is able to provide stable current and high voltage support, suitable for LED lighting systems that require high voltage and high current, including commercial lighting and industrial applications.
5. **Industrial control**: Suitable for various industrial control applications such as motor drive and high-voltage switchgear. The high current and high voltage handling capabilities of CEB658N-VB make it suitable for use in industrial equipment and automation systems, providing reliable performance and stability.
These application examples demonstrate the superior performance of CEB658N-VB in high voltage and high current switching, making it a key component in a variety of electronic devices and systems.
The design of CEB658N-VB makes it suitable for multiple applications and modules, including:
1. **High Voltage Switch**: In high voltage switching applications, CEB658N-VB can handle drain-source voltages up to 200V, suitable for high voltage power switches and power management systems. Its low on-resistance helps reduce power consumption and ensures efficient switching operations.
2. **Power Converter**: In switch mode power supplies (SMPS) and DC-DC converters, the high voltage capability and low RDS(ON) of CEB658N-VB provide efficient power conversion solutions. Suitable for applications such as power management, voltage regulation and power conditioning.
3. **Automotive Electronics**: Used in automotive power management systems and load control, such as power windows, on-board battery management and other high voltage applications. The high current handling capability and high voltage tolerance of CEB658N-VB ensure the stability and reliability of automotive systems.
4. **LED drive**: In high-power LED drive circuits, CEB658N-VB is able to provide stable current and high voltage support, suitable for LED lighting systems that require high voltage and high current, including commercial lighting and industrial applications.
5. **Industrial control**: Suitable for various industrial control applications such as motor drive and high-voltage switchgear. The high current and high voltage handling capabilities of CEB658N-VB make it suitable for use in industrial equipment and automation systems, providing reliable performance and stability.
These application examples demonstrate the superior performance of CEB658N-VB in high voltage and high current switching, making it a key component in a variety of electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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