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CEB630N-VB Product details
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CEB630N-VB MOSFET Product Introduction
CEB630N-VB is a high voltage N-channel MOSFET in TO263 package, designed for applications requiring high voltage and medium current. The maximum drain-source voltage (VDS) of this MOSFET is 200V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 3V. Its on-resistance (RDS(ON)) is 300mΩ at VGS = 10V, and the maximum drain current (ID) is 10A. The use of Trench technology makes this MOSFET have a lower on-resistance and good switching performance, making it suitable for high voltage applications.
CEB630N-VB is a high voltage N-channel MOSFET in TO263 package, designed for applications requiring high voltage and medium current. The maximum drain-source voltage (VDS) of this MOSFET is 200V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 3V. Its on-resistance (RDS(ON)) is 300mΩ at VGS = 10V, and the maximum drain current (ID) is 10A. The use of Trench technology makes this MOSFET have a lower on-resistance and good switching performance, making it suitable for high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | 300mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO263
- **Description**: The TO263 package is a surface mount package with good heat dissipation performance and strong mechanical strength, suitable for circuits used in medium and high power applications.
2. **Configuration**: Single N-channel
- **Description**: This MOSFET is a single N-channel configuration, suitable for circuit designs that require positive current control.
3. **VDS (Drain-Source Voltage)**: 200V
- **Description**: Maximum drain-source voltage, suitable for handling high voltage applications, and can operate stably in high voltage environments.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: Maximum voltage between the gate and the source, supporting a flexible control voltage range to adapt to circuit designs with different voltage requirements.
5. **Vth (Threshold Voltage)**: 3V
- **Description**: The minimum gate voltage that turns the MOSFET on, below which the MOSFET will remain off.
6. **RDS(ON) (On-Resistance)**: 300mΩ @ VGS = 10V
- **Description**: The on-resistance at a gate voltage of 10V, affecting the conduction loss and power efficiency of the MOSFET.
7. **ID (Continuous Drain Current)**: 10A
- **Description**: The maximum current that a MOSFET can handle continuously under specified conditions, ensuring stability and reliability in high current applications.
8. **Technology**: Trench
- **Description**: Trench technology is used to optimize the on-resistance and switching performance of the MOSFET, improving overall power efficiency and performance.
1. **Package**: TO263
- **Description**: The TO263 package is a surface mount package with good heat dissipation performance and strong mechanical strength, suitable for circuits used in medium and high power applications.
2. **Configuration**: Single N-channel
- **Description**: This MOSFET is a single N-channel configuration, suitable for circuit designs that require positive current control.
3. **VDS (Drain-Source Voltage)**: 200V
- **Description**: Maximum drain-source voltage, suitable for handling high voltage applications, and can operate stably in high voltage environments.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: Maximum voltage between the gate and the source, supporting a flexible control voltage range to adapt to circuit designs with different voltage requirements.
5. **Vth (Threshold Voltage)**: 3V
- **Description**: The minimum gate voltage that turns the MOSFET on, below which the MOSFET will remain off.
6. **RDS(ON) (On-Resistance)**: 300mΩ @ VGS = 10V
- **Description**: The on-resistance at a gate voltage of 10V, affecting the conduction loss and power efficiency of the MOSFET.
7. **ID (Continuous Drain Current)**: 10A
- **Description**: The maximum current that a MOSFET can handle continuously under specified conditions, ensuring stability and reliability in high current applications.
8. **Technology**: Trench
- **Description**: Trench technology is used to optimize the on-resistance and switching performance of the MOSFET, improving overall power efficiency and performance.
Domain and module applications：
Application Examples
1. **Power Converter**:
- CEB630N-VB can be used in high voltage power converters, such as AC-DC converters and DC-DC converters. Its high voltage withstand capability and moderate on-resistance enable it to have good efficiency and stability in the power conversion process.
2. **Power Switch**:
- In power switching applications, such as motor control and load switching, the high voltage capability and medium current capability of CEB630N-VB make it suitable for occasions requiring high voltage and reliable switching, such as switch control in motor drive systems.
3. **Power Management**:
- In power management systems, such as battery management and power protection circuits, CEB630N-VB can be used as a switching element to control the switching and protection of the power supply. Its high voltage handling capability ensures safe operation in high voltage environments.
4. **Automotive electronics**:
- In automotive electronic systems, this MOSFET can be used for on-board power and electrical load control. Its high voltage tolerance and stability are suitable for high voltage switching applications in automotive electrical systems.
5. **Industrial control**:
- CEB630N-VB is also suitable for high voltage switching applications in industrial automation and control systems. In industrial equipment, it can provide stable current control and reliable switching performance.
In short, the high voltage tolerance, medium current capability and good switching performance of CEB630N-VB MOSFET make it widely used in power conversion, power switching, power management, automotive electronics and industrial control.
1. **Power Converter**:
- CEB630N-VB can be used in high voltage power converters, such as AC-DC converters and DC-DC converters. Its high voltage withstand capability and moderate on-resistance enable it to have good efficiency and stability in the power conversion process.
2. **Power Switch**:
- In power switching applications, such as motor control and load switching, the high voltage capability and medium current capability of CEB630N-VB make it suitable for occasions requiring high voltage and reliable switching, such as switch control in motor drive systems.
3. **Power Management**:
- In power management systems, such as battery management and power protection circuits, CEB630N-VB can be used as a switching element to control the switching and protection of the power supply. Its high voltage handling capability ensures safe operation in high voltage environments.
4. **Automotive electronics**:
- In automotive electronic systems, this MOSFET can be used for on-board power and electrical load control. Its high voltage tolerance and stability are suitable for high voltage switching applications in automotive electrical systems.
5. **Industrial control**:
- CEB630N-VB is also suitable for high voltage switching applications in industrial automation and control systems. In industrial equipment, it can provide stable current control and reliable switching performance.
In short, the high voltage tolerance, medium current capability and good switching performance of CEB630N-VB MOSFET make it widely used in power conversion, power switching, power management, automotive electronics and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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