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CEB6186-VB Product details
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CEB6186-VB MOSFET Product Introduction
**Model**: CEB6186-VB
**Package**: TO263
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 60V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 1.7V
**On-resistance (RDS(ON))**: 12mΩ@VGS=4.5V
**On-resistance (RDS(ON))**: 11mΩ@VGS=10V
**Maximum drain current (ID)**: 75A
**Technology**: Trench
CEB6186-VB is a high-performance N-channel power MOSFET using Trench technology, designed for high current and low power applications. Its low on-resistance and high drain current capability make it ideal for applications requiring efficient switching, providing stable and efficient switching performance.
**Model**: CEB6186-VB
**Package**: TO263
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 60V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 1.7V
**On-resistance (RDS(ON))**: 12mΩ@VGS=4.5V
**On-resistance (RDS(ON))**: 11mΩ@VGS=10V
**Maximum drain current (ID)**: 75A
**Technology**: Trench
CEB6186-VB is a high-performance N-channel power MOSFET using Trench technology, designed for high current and low power applications. Its low on-resistance and high drain current capability make it ideal for applications requiring efficient switching, providing stable and efficient switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V (typical)
- **On-resistance (RDS(ON))**: 12mΩ@VGS=4.5V
- **On-resistance (RDS(ON))**: 11mΩ@VGS=10V
- **Maximum drain current (ID)**: 75A
- **Drain-source breakdown voltage (BVDSS)**: 60V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 75W
- **Junction-to-ambient thermal resistance (RθJA)**: 40°C/W
- **Junction-to-case thermal resistance (RθJC)**: 1.5°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V (typical)
- **On-resistance (RDS(ON))**: 12mΩ@VGS=4.5V
- **On-resistance (RDS(ON))**: 11mΩ@VGS=10V
- **Maximum drain current (ID)**: 75A
- **Drain-source breakdown voltage (BVDSS)**: 60V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 75W
- **Junction-to-ambient thermal resistance (RθJA)**: 40°C/W
- **Junction-to-case thermal resistance (RθJC)**: 1.5°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power Switch**: The low on-resistance and high current handling capability of CEB6186-VB make it ideal for power switching applications, such as switches in DC-DC converters. It is able to maintain low power consumption under high load conditions, improving overall system efficiency.
2. **Load Switch**: In load switching applications, such as the on/off control of high-power power supplies, CEB6186-VB is able to provide stable switching performance. Its low on-resistance reduces power consumption and ensures efficient operation of the system.
3. **Power Management**: CEB6186-VB is suitable for power management modules, such as power distribution and protection circuits. Its high current capability and low on-resistance help improve the reliability and efficiency of power management systems and excels when handling high currents.
4. **Inverter Applications**: In inverter applications, such as solar inverters or uninterruptible power supplies (UPS), CEB6186-VB can efficiently handle larger currents and provide stable switching control, thereby improving the performance and energy efficiency of the inverter.
5. **Motor Drive**: In motor drive modules, such as electric vehicles or industrial motor controllers, CEB6186-VB is able to handle large current loads, reduce switching losses, and improve the overall efficiency and reliability of the motor system.
6. **Industrial Automation**: CEB6186-VB is suitable for high current switching needs in industrial automation systems. Its high current handling capability and low power consumption make it perform well in various industrial applications, improving system stability and efficiency.
CEB6186-VB is a high current, low on-resistance N-channel power MOSFET suitable for power switches, load switches, power management, inverters, motor drives and industrial automation. Its excellent performance and reliability make it an ideal choice for various high current applications.
1. **Power Switch**: The low on-resistance and high current handling capability of CEB6186-VB make it ideal for power switching applications, such as switches in DC-DC converters. It is able to maintain low power consumption under high load conditions, improving overall system efficiency.
2. **Load Switch**: In load switching applications, such as the on/off control of high-power power supplies, CEB6186-VB is able to provide stable switching performance. Its low on-resistance reduces power consumption and ensures efficient operation of the system.
3. **Power Management**: CEB6186-VB is suitable for power management modules, such as power distribution and protection circuits. Its high current capability and low on-resistance help improve the reliability and efficiency of power management systems and excels when handling high currents.
4. **Inverter Applications**: In inverter applications, such as solar inverters or uninterruptible power supplies (UPS), CEB6186-VB can efficiently handle larger currents and provide stable switching control, thereby improving the performance and energy efficiency of the inverter.
5. **Motor Drive**: In motor drive modules, such as electric vehicles or industrial motor controllers, CEB6186-VB is able to handle large current loads, reduce switching losses, and improve the overall efficiency and reliability of the motor system.
6. **Industrial Automation**: CEB6186-VB is suitable for high current switching needs in industrial automation systems. Its high current handling capability and low power consumption make it perform well in various industrial applications, improving system stability and efficiency.
CEB6186-VB is a high current, low on-resistance N-channel power MOSFET suitable for power switches, load switches, power management, inverters, motor drives and industrial automation. Its excellent performance and reliability make it an ideal choice for various high current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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