CEB6060R-VB Product details
Product introduction:
CEB6060R-VB is a high-performance single N-channel power MOSFET packaged in a TO263 package using advanced trench technology. This MOSFET is designed for medium voltage applications and can operate stably at drain-source voltages up to 60V. Its ultra-low on-resistance and high current handling capability make it an excellent performer in applications requiring high performance and high reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Continuous drain current (ID)**: 75A
- **Technology**: Trench Technology
Domain and module applications:
1. **High-efficiency switching power supply**: The low on-resistance and high current capability of CEB6060R-VB make it very suitable for high-efficiency switching power supply design. It can be used as a switching element in DC-DC converters and switching regulators, providing higher power efficiency and lower power consumption, and is suitable for power supply applications that require high current and high efficiency.
2. **Motor drive**: In motor drive applications, such as DC motors and stepper motor controllers, the high current handling capability and low on-resistance of CEB6060R-VB can effectively drive motor loads. Its excellent switching performance helps to improve the efficiency and response speed of the motor system, and is suitable for motor drive modules in various industrial and consumer electronics.
3. **LED drive**: In LED drive applications, especially high-power LED lamps and display backlight systems, the low on-resistance of CEB6060R-VB can handle larger current loads, ensure efficient LED drive and reduce energy loss, and improve the overall performance of the system.
4. **Automotive electronics**: CEB6060R-VB is also suitable for power management and switch control modules in automotive electronic systems. Its high current capability and low on-resistance enable stable operation in the automotive environment, provide reliable electrical control, and ensure the stability and high efficiency of the automotive electrical system.
5. **Industrial control**: In industrial control systems, such as power conversion and power switching applications, the high performance of CEB6060R-VB enables it to handle high voltage and high current loads, suitable for various industrial modules, ensuring the reliability and high efficiency of the system.
In summary, CEB6060R-VB is a high-efficiency power MOSFET suitable for medium voltage and high current applications. Its low on-resistance and advanced trench technology enable it to perform well in the fields of switching power supplies, motor drives, LED drives, automotive electronics, and industrial controls, providing excellent performance and reliability for a variety of applications.
Technical support:
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