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CEB6020P-VB Product details
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CEB6020P-VB MOSFET Product Introduction
**Model**: CEB6020P-VB
**Package**: TO263
**Configuration**: Single P-channel
**Maximum drain-source voltage (VDS)**: -30V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: -2.5V
**On-resistance (RDS(ON))**: 11mΩ@VGS=4.5V
**On-resistance (RDS(ON))**: 8mΩ@VGS=10V
**Maximum drain current (ID)**: -75A
**Technology**: Trench
CEB6020P-VB is a high current, low on-resistance P-channel power MOSFET using Trench technology. It provides excellent switching performance with high drain current capability and low on-resistance, making it ideal for load switching applications requiring high current and high efficiency.
**Model**: CEB6020P-VB
**Package**: TO263
**Configuration**: Single P-channel
**Maximum drain-source voltage (VDS)**: -30V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: -2.5V
**On-resistance (RDS(ON))**: 11mΩ@VGS=4.5V
**On-resistance (RDS(ON))**: 8mΩ@VGS=10V
**Maximum drain current (ID)**: -75A
**Technology**: Trench
CEB6020P-VB is a high current, low on-resistance P-channel power MOSFET using Trench technology. It provides excellent switching performance with high drain current capability and low on-resistance, making it ideal for load switching applications requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package type**: TO263
- **Channel type**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2.5V (typical)
- **On-resistance (RDS(ON))**: 11mΩ@VGS=4.5V
- **On-resistance (RDS(ON))**: 8mΩ@VGS=10V
- **Maximum drain current (ID)**: -75A
- **Drain-source breakdown voltage (BVDSS)**: -30V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 70W
- **Junction-to-ambient thermal resistance (RθJA)**: 35°C/W
- **Junction-to-case thermal resistance (RθJC)**: 1.8°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
- **Package type**: TO263
- **Channel type**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2.5V (typical)
- **On-resistance (RDS(ON))**: 11mΩ@VGS=4.5V
- **On-resistance (RDS(ON))**: 8mΩ@VGS=10V
- **Maximum drain current (ID)**: -75A
- **Drain-source breakdown voltage (BVDSS)**: -30V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 70W
- **Junction-to-ambient thermal resistance (RθJA)**: 35°C/W
- **Junction-to-case thermal resistance (RθJC)**: 1.8°C/W
- **Operating junction temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power switch**: The low on-resistance and high current capability of CEB6020P-VB make it ideal for power switching applications, such as switches in DC-DC converters. Its high current handling capability ensures stable switching under high load conditions, reduces power consumption and improves system efficiency.
2. **Load switch**: In load switching applications, such as switching control for high current loads, CEB6020P-VB can provide reliable switching performance. Its low on-resistance can effectively reduce power consumption and is suitable for various load switching occasions that require high current.
3. **Power management**: CEB6020P-VB is suitable for power management modules, such as power distribution and power protection circuits. Its high current capability and low on-resistance enable it to provide stable switching control in power management systems, ensuring high efficiency and reliability of the system.
4. **Inverter Application**: In inverter applications, such as solar inverters or UPS, CEB6020P-VB can handle high current loads and switch efficiently with low power consumption. This feature helps improve the performance and efficiency of the inverter, ensuring its stable operation under high load conditions.
5. **Motor Drive**: In motor drive modules, CEB6020P-VB is able to provide powerful switching capabilities for electric vehicles or industrial motor controllers. Its low on-resistance and high current handling capabilities help improve the efficiency and performance of motor drive systems.
6. **Industrial Automation**: For industrial automation applications that require high current handling, CEB6020P-VB provides excellent switching performance and high current capability. It can be used as a high current switch in various industrial control systems to improve the stability and reliability of the system.
CEB6020P-VB is a high current, low on-resistance P-channel power MOSFET, widely used in power switches, load switches, power management, inverters, motor drives and industrial automation. Its excellent performance and reliability make it an ideal choice for various high current applications.
1. **Power switch**: The low on-resistance and high current capability of CEB6020P-VB make it ideal for power switching applications, such as switches in DC-DC converters. Its high current handling capability ensures stable switching under high load conditions, reduces power consumption and improves system efficiency.
2. **Load switch**: In load switching applications, such as switching control for high current loads, CEB6020P-VB can provide reliable switching performance. Its low on-resistance can effectively reduce power consumption and is suitable for various load switching occasions that require high current.
3. **Power management**: CEB6020P-VB is suitable for power management modules, such as power distribution and power protection circuits. Its high current capability and low on-resistance enable it to provide stable switching control in power management systems, ensuring high efficiency and reliability of the system.
4. **Inverter Application**: In inverter applications, such as solar inverters or UPS, CEB6020P-VB can handle high current loads and switch efficiently with low power consumption. This feature helps improve the performance and efficiency of the inverter, ensuring its stable operation under high load conditions.
5. **Motor Drive**: In motor drive modules, CEB6020P-VB is able to provide powerful switching capabilities for electric vehicles or industrial motor controllers. Its low on-resistance and high current handling capabilities help improve the efficiency and performance of motor drive systems.
6. **Industrial Automation**: For industrial automation applications that require high current handling, CEB6020P-VB provides excellent switching performance and high current capability. It can be used as a high current switch in various industrial control systems to improve the stability and reliability of the system.
CEB6020P-VB is a high current, low on-resistance P-channel power MOSFET, widely used in power switches, load switches, power management, inverters, motor drives and industrial automation. Its excellent performance and reliability make it an ideal choice for various high current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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