CEB50N10-VB Product details
Product introduction:
CEB50N10-VB is a high-performance single N-channel power MOSFET that uses advanced trench technology and is packaged in a standard TO263 package. This MOSFET is designed for high voltage and medium current applications and can operate stably at drain-source voltages up to 100V. Its low on-resistance and good switching performance make it an excellent performer in high-efficiency and high-reliability applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS=10V
- **Continuous drain current (ID)**: 70A
- **Technology**: Trench Technology
Domain and module applications:
1. **Switching Power Supply**: The high voltage tolerance and low on-resistance of CEB50N10-VB make it suitable for switching power supply design. It can be used as a switching element in DC-DC converters and switching regulators to help improve power efficiency, reduce power consumption, and work stably in high voltage environments.
2. **Motor Drive**: In motor drive applications, such as DC motors and stepper motor controllers, CEB50N10-VB provides high current handling capability and low on-resistance. It can efficiently drive motor loads, improve system efficiency and reduce energy loss, and is suitable for motor drive modules in industrial and consumer electronics.
3. **LED Drive**: CEB50N10-VB also performs well for high-power LED drive circuits. Its low on-resistance can effectively handle large current loads, making it very suitable for use in LED lamps and display backlight systems to improve drive efficiency and extend the life of LEDs.
4. **Automotive electronics**: In automotive electronic systems, such as power management and switch control modules, CEB50N10-VB provides high current capability and high voltage handling capabilities. It is able to operate stably in the automotive environment, ensuring the reliability and efficiency of the electrical system.
5. **Industrial control**: In industrial control systems, especially applications that require high voltage and high current handling, such as power conversion and power switching, the high performance of CEB50N10-VB enables it to handle a variety of industrial loads, ensuring the stability and efficiency of the system.
In summary, CEB50N10-VB is a high voltage, high current capability power MOSFET suitable for switching power supplies, motor drives, LED drives, automotive electronics, and industrial control. Its low on-resistance and advanced trench technology enable it to provide excellent performance and reliability in a variety of applications.
Technical support:
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