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CEB4060A-VB Product details
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CEB4060A-VB MOSFET Product Introduction
CEB4060A-VB is a high-performance N-channel MOSFET in TO263 package, designed for medium-to-high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 1.7V. Its on-resistance (RDS(ON)) is 35mΩ at VGS = 4.5V and 32mΩ at VGS = 10V, and the maximum drain current (ID) is 50A. The use of Trench technology makes this MOSFET have low on-resistance and high switching performance, suitable for a variety of applications requiring high efficiency and high current.
CEB4060A-VB is a high-performance N-channel MOSFET in TO263 package, designed for medium-to-high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, the gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 1.7V. Its on-resistance (RDS(ON)) is 35mΩ at VGS = 4.5V and 32mΩ at VGS = 10V, and the maximum drain current (ID) is 50A. The use of Trench technology makes this MOSFET have low on-resistance and high switching performance, suitable for a variety of applications requiring high efficiency and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO263
- **Description**: The TO263 package is a surface mount package suitable for high power and high current applications with good heat dissipation and durability.
2. **Configuration**: Single N-channel
- **Description**: This MOSFET has a single N-channel configuration suitable for circuits used in positive current control.
3. **VDS (Drain-Source Voltage)**: 60V
- **Description**: Maximum drain-source voltage, suitable for current applications handling medium voltage.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: Maximum voltage between gate and source, allowing flexible control circuit operation.
5. **Vth (Threshold Voltage)**: 1.7V
- **Description**: The minimum gate voltage that turns on the MOSFET. Below this voltage, the MOSFET does not conduct.
6. **RDS(ON) (On-Resistance)**: 35mΩ @ VGS = 4.5V
- **Description**: The on-resistance at a gate voltage of 4.5V, affecting the conduction loss and efficiency of the MOSFET.
7. **RDS(ON) (On-Resistance)**: 32mΩ @ VGS = 10V
- **Description**: The on-resistance at a gate voltage of 10V, providing a lower on-resistance and improving power efficiency.
8. **ID (Continuous Drain Current)**: 50A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions, ensuring stability in high current applications.
9. **Technology**: Trench
- **Description**: Trench technology optimizes the on-resistance and switching performance of MOSFET, improving overall efficiency and reliability.
1. **Package**: TO263
- **Description**: The TO263 package is a surface mount package suitable for high power and high current applications with good heat dissipation and durability.
2. **Configuration**: Single N-channel
- **Description**: This MOSFET has a single N-channel configuration suitable for circuits used in positive current control.
3. **VDS (Drain-Source Voltage)**: 60V
- **Description**: Maximum drain-source voltage, suitable for current applications handling medium voltage.
4. **VGS (Gate-Source Voltage)**: ±20V
- **Description**: Maximum voltage between gate and source, allowing flexible control circuit operation.
5. **Vth (Threshold Voltage)**: 1.7V
- **Description**: The minimum gate voltage that turns on the MOSFET. Below this voltage, the MOSFET does not conduct.
6. **RDS(ON) (On-Resistance)**: 35mΩ @ VGS = 4.5V
- **Description**: The on-resistance at a gate voltage of 4.5V, affecting the conduction loss and efficiency of the MOSFET.
7. **RDS(ON) (On-Resistance)**: 32mΩ @ VGS = 10V
- **Description**: The on-resistance at a gate voltage of 10V, providing a lower on-resistance and improving power efficiency.
8. **ID (Continuous Drain Current)**: 50A
- **Description**: The maximum current that the MOSFET can handle continuously under specified conditions, ensuring stability in high current applications.
9. **Technology**: Trench
- **Description**: Trench technology optimizes the on-resistance and switching performance of MOSFET, improving overall efficiency and reliability.
Domain and module applications：
Application Examples
1. **Power Management**:
- CEB4060A-VB can be used as a switching element in power management systems, such as DC-DC converters. Its low on-resistance and high current handling capability enable it to excel in high-efficiency power conversion, improving the power density and performance of the overall system.
2. **Battery Management System**:
- In a battery management system, CEB4060A-VB can be used as a battery switch to control the charging and discharging process. Its high current capability and low on-resistance characteristics ensure that the battery operates safely and reliably under high load conditions and prolongs battery life.
3. **Power Switch**:
- In power switching applications, such as motor drives and load switches, the high current capability and low on-resistance of CEB4060A-VB enable it to efficiently control current, making it suitable for applications that require high power and high current handling.
4. **Automotive Electronics**:
- In automotive electronic systems, this MOSFET can be used in high-power power control modules such as on-board power converters and electrical load control systems. Its reliability and high-performance characteristics can meet the demanding requirements of the automotive environment.
5. **Industrial Control**:
- CEB4060A-VB is also suitable for switching applications in industrial automation and control systems. Its high current capability and excellent switching performance enable it to operate stably in industrial environments and is suitable for power control and protection circuits of industrial equipment.
In short, the low on-resistance, high current handling capability and excellent switching performance of the CEB4060A-VB MOSFET make it widely used in many fields such as power management, battery management, power switching, automotive electronics and industrial control.
1. **Power Management**:
- CEB4060A-VB can be used as a switching element in power management systems, such as DC-DC converters. Its low on-resistance and high current handling capability enable it to excel in high-efficiency power conversion, improving the power density and performance of the overall system.
2. **Battery Management System**:
- In a battery management system, CEB4060A-VB can be used as a battery switch to control the charging and discharging process. Its high current capability and low on-resistance characteristics ensure that the battery operates safely and reliably under high load conditions and prolongs battery life.
3. **Power Switch**:
- In power switching applications, such as motor drives and load switches, the high current capability and low on-resistance of CEB4060A-VB enable it to efficiently control current, making it suitable for applications that require high power and high current handling.
4. **Automotive Electronics**:
- In automotive electronic systems, this MOSFET can be used in high-power power control modules such as on-board power converters and electrical load control systems. Its reliability and high-performance characteristics can meet the demanding requirements of the automotive environment.
5. **Industrial Control**:
- CEB4060A-VB is also suitable for switching applications in industrial automation and control systems. Its high current capability and excellent switching performance enable it to operate stably in industrial environments and is suitable for power control and protection circuits of industrial equipment.
In short, the low on-resistance, high current handling capability and excellent switching performance of the CEB4060A-VB MOSFET make it widely used in many fields such as power management, battery management, power switching, automotive electronics and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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