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CEB3205-VB Product details
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CEB3205-VB MOSFET Product Introduction
**Model**: CEB3205-VB
**Package**: TO263
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 60V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 3V
**On-resistance (RDS(ON))**: 4mΩ@VGS=10V
**Maximum drain current (ID)**: 150A
**Technology**: Trench
CEB3205-VB is a high current, low on-resistance N-channel power MOSFET using Trench technology. It offers high current handling capability of 150A at a maximum drain-source voltage of 60V and very low on-resistance, making it ideal for applications requiring high current and low power consumption.
**Model**: CEB3205-VB
**Package**: TO263
**Configuration**: Single N-channel
**Maximum drain-source voltage (VDS)**: 60V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 3V
**On-resistance (RDS(ON))**: 4mΩ@VGS=10V
**Maximum drain current (ID)**: 150A
**Technology**: Trench
CEB3205-VB is a high current, low on-resistance N-channel power MOSFET using Trench technology. It offers high current handling capability of 150A at a maximum drain-source voltage of 60V and very low on-resistance, making it ideal for applications requiring high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V (typical)
- **On-resistance (RDS(ON))**: 4mΩ@VGS=10V
- **Maximum drain current (ID)**: 150A
- **Drain-source breakdown voltage (BVDSS)**: 60V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 135W
- **Junction-to-ambient thermal resistance (RθJA)**: 22°C/W
- **Junction-to-Case Thermal Resistance (RθJC)**: 1.2°C/W
- **Operating Junction Temperature Range**: -55°C to +150°C
- **Storage Temperature Range**: -55°C to +150°C
- **Technology**: Trench
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V (typical)
- **On-resistance (RDS(ON))**: 4mΩ@VGS=10V
- **Maximum drain current (ID)**: 150A
- **Drain-source breakdown voltage (BVDSS)**: 60V
- **Gate leakage current (IGSS)**: ±100nA @ VGS=±20V
- **Power dissipation (Ptot)**: 135W
- **Junction-to-ambient thermal resistance (RθJA)**: 22°C/W
- **Junction-to-Case Thermal Resistance (RθJC)**: 1.2°C/W
- **Operating Junction Temperature Range**: -55°C to +150°C
- **Storage Temperature Range**: -55°C to +150°C
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High current power switching**: The low on-resistance and high current capability of CEB3205-VB make it ideal for high current power switching applications such as DC-DC converters. This MOSFET can effectively reduce power consumption and improve system efficiency, especially in applications that need to handle high currents.
2. **Motor drive**: In motor drive modules, such as electric vehicles or industrial motor controllers, CEB3205-VB can provide high current support, and its low on-resistance can reduce power consumption and improve the overall efficiency and performance of the system.
3. **Power management**: CEB3205-VB is suitable for various power management systems, such as power distribution and power protection modules. Its high current handling capability and low on-resistance make it excellent in power switching and current management, ensuring stable system operation.
4. **Inverter Applications**: In inverter applications, such as solar inverters or uninterruptible power supplies (UPS), the CEB3205-VB is able to handle higher currents and perform efficient switching with low power consumption to ensure stable inverter operation.
5. **Industrial Automation**: In industrial automation systems, the CEB3205-VB is suitable for switching and control applications that require high current handling. Its high current capability and low power consumption can improve system reliability and efficiency.
6. **Battery Management System**: In battery management systems, the CEB3205-VB can be used for high current switching and protection functions. Its high current carrying capability and low on-resistance help improve the overall performance and efficiency of battery management systems.
The CEB3205-VB is a high current, low on-resistance N-channel power MOSFET suitable for power switching, motor drives, power management, inverters, industrial automation and battery management that require high current and high efficiency. Its excellent performance and reliability make it an excellent performer in these applications.
1. **High current power switching**: The low on-resistance and high current capability of CEB3205-VB make it ideal for high current power switching applications such as DC-DC converters. This MOSFET can effectively reduce power consumption and improve system efficiency, especially in applications that need to handle high currents.
2. **Motor drive**: In motor drive modules, such as electric vehicles or industrial motor controllers, CEB3205-VB can provide high current support, and its low on-resistance can reduce power consumption and improve the overall efficiency and performance of the system.
3. **Power management**: CEB3205-VB is suitable for various power management systems, such as power distribution and power protection modules. Its high current handling capability and low on-resistance make it excellent in power switching and current management, ensuring stable system operation.
4. **Inverter Applications**: In inverter applications, such as solar inverters or uninterruptible power supplies (UPS), the CEB3205-VB is able to handle higher currents and perform efficient switching with low power consumption to ensure stable inverter operation.
5. **Industrial Automation**: In industrial automation systems, the CEB3205-VB is suitable for switching and control applications that require high current handling. Its high current capability and low power consumption can improve system reliability and efficiency.
6. **Battery Management System**: In battery management systems, the CEB3205-VB can be used for high current switching and protection functions. Its high current carrying capability and low on-resistance help improve the overall performance and efficiency of battery management systems.
The CEB3205-VB is a high current, low on-resistance N-channel power MOSFET suitable for power switching, motor drives, power management, inverters, industrial automation and battery management that require high current and high efficiency. Its excellent performance and reliability make it an excellent performer in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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